Investigation of interfacial reaction product of SiCf/C/Mo/Ti6Al4V composite through Raman spectroscopy

2014 ◽  
Vol 104 (8) ◽  
pp. 081611 ◽  
Author(s):  
Zhiyuan Xiao ◽  
Yanqing Yang ◽  
Xian Luo ◽  
Bin Huang

2015 ◽  
Vol 98 (6) ◽  
pp. 1937-1941 ◽  
Author(s):  
Zhiyuan Xiao ◽  
Yanqing Yang ◽  
Xian Luo ◽  
Bin Huang


2014 ◽  
Vol 941-944 ◽  
pp. 245-250 ◽  
Author(s):  
Bai Ping Lu ◽  
Xing Feng Liu ◽  
Tian Tian Shuai

Two-dimensional carbon fiber fabric T300 used as reinforcement, Cf/Al composite material was prepared by hot pressing diffusion. Effect of parameters on microstructure of Cf/Al composite material was studied. We found that for aluminum foil used as matrix, hot pressing temperature is 650°C, hot pressing time is 20min, pressure is 30MPa. As a case, interfacial reaction product Al4C3 accounts for 3.6%, and composite material density is 2.44g/cm3. For aluminum powder used as matrix, hot pressing temperature is 620°C, hot pressing time is 35min, pressure is 10MPa. As a case, Al4C3 accounts for 2.8%, and composite material density is 2.58g/cm3. The molding of aluminum powder is much easier than that of aluminum foil. The latter requires higher hot pressing temperature. Interfacial reaction product Al4C3 increases as increasing of hot pressing temperature and pressure.



1996 ◽  
Vol 5 (2) ◽  
pp. 119-128 ◽  
Author(s):  
Mingyuan Gu ◽  
Haining Yang ◽  
Weijie Jiang ◽  
Guoding Zhang


2006 ◽  
Vol 21 (7) ◽  
pp. 1849-1856 ◽  
Author(s):  
Chin-yi Chou ◽  
Sinn-wen Chen ◽  
Yee-shyi Chang

Sn–Zn-based alloys are promising low melting-point Pb-free solders, and it has been reported that their wetting properties and oxidation resistance can be improved with the addition of Cu. The interfacial reactions in the Sn–9 wt% Zn–xCu/Cu couples at 250 °C and Sn–9 wt% Zn–xCu/Ni at 280 °C were examined in this study. A thick γ–Cu5Zn8 phase layer and a very thin β′–CuZn phase layer were formed in both the Sn–9 wt% Zn/Cu and the Sn–9 wt% Zn–1 wt% Cu/Cu couples. The γ–Ni5Zn21 phase layer was formed in both the Sn–9 wt% Zn/Ni and Sn–9 wt% Zn–1 wt% Cu/Ni couples. With longer reaction time, the δ–Ni3Sn4 phase were formed in the Sn–9 wt% Zn/Ni couple as well. In both the Cu and Ni couples, the Zn-containing γ phases were uniform and planar and were the dominant reaction products. However, when the Cu content of the Sn–9 wt% Zn–xCu solders was 10 wt%, the interfacial reaction product becomes the η–Cu6Sn5 phase in both the Cu and Ni couples.





2004 ◽  
Vol 810 ◽  
Author(s):  
L. J. Jin ◽  
K. L. Pey ◽  
W. K. Choi ◽  
E. A. Fitzgerald ◽  
D. A. Antoniadis ◽  
...  

ABSTRACTThe interfacial reaction between 10 nm Ni(Pt ∼0, 5, 10 at.%) and (100) Si0.75Ge0.25 substrate after rapid thermal annealing between 400 and 800°C has been studied in detail using Micro- Raman spectroscopy. Only monogermanosilicide phase was detected in the temperature range investigated. The evolution of a broad Ni(Pt)SiGe Raman peak into two distinct peaks with increasing annealing temperature is attributed to a Ge out-diffusion from the germanosilicide grains. In addition, Raman spectroscopy further proves that depletion of Ge concentration in the Ni(Pt)SiGe grains reduces at higher temperature by the addition of Pt. The above phenomena were further supported by X-ray diffraction method.







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