Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors

Ram Mohan Verma; Ashwath Rao; B. R. Singh

doi:10.1063/1.4866655

Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors

Applied Physics Letters ◽

10.1063/1.4866655 ◽

2014 ◽

Vol 104 (9) ◽

pp. 092907 ◽

Cited By ~ 10

Author(s):

Ram Mohan Verma ◽

Ashwath Rao ◽

B. R. Singh

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Nitride Semiconductor ◽

Ferroelectric Oxide

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Electrical characterization of CeO2∕Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2838746 ◽

2008 ◽

Vol 92 (4) ◽

pp. 043507 ◽

Cited By ~ 22

Author(s):

Chun-Heng Chen ◽

Ingram Yin-Ku Chang ◽

Joseph Ya-Min Lee ◽

Fu-Chien Chiu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties

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Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

2016 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2016.7578010 ◽

2016 ◽

Author(s):

Marolop Simanullang ◽

Gde B. M. Wisna ◽

Wei Cao ◽

Koichi Usami ◽

Kaustav Banerjee ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Cited By ~ 1

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

Applied Physics Letters ◽

10.1063/1.3696045 ◽

2012 ◽

Vol 100 (12) ◽

pp. 123104 ◽

Cited By ~ 385

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization

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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Cited By ~ 4

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Secondary Ion

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1849424 ◽

2005 ◽

Vol 97 (4) ◽

pp. 046106 ◽

Cited By ~ 4

Author(s):

Stephen K. Powell ◽

Neil Goldsman ◽

Aivars Lelis ◽

James M. McGarrity ◽

Flynn B. McLean

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Modeling

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Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3130016 ◽

2021 ◽

pp. 1-7

Author(s):

Zhihao Chen ◽

Xinxin Yu ◽

Jianjun Zhou ◽

Shuman Mao ◽

Yuechan Kong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

Wave Detection

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Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Applied Physics Letters ◽

10.1063/1.4773914 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012106 ◽

Cited By ~ 4

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Bin-Wei Wang ◽

Ying-Shin Lu ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Charge Pumping

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