An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors

2014 ◽  
Vol 104 (12) ◽  
pp. 123504 ◽  
Author(s):  
Zhi Wang ◽  
Xiang-Wei Jiang ◽  
Shu-Shen Li ◽  
Lin-Wang Wang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Quantum Mechanical ◽  
Mechanical Simulation ◽  
Band To Band Tunneling ◽  
Tunneling Field Effect Transistors

Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4310-4314
Author(s):  
Juhee Jeon ◽  
Young-Soo Park ◽  
Sola Woo ◽  
Doohyeok Lim ◽  
Jaemin Son ◽  
...  
Keyword(s):  
Design Optimization ◽  
Mole Fraction ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Barrier ◽  
Current Ratio ◽  
Threshold Voltages ◽  
Band To Band Tunneling ◽  
Tunneling Field Effect Transistors ◽  
Commercial Device

In this paper, we propose the design optimization of underlapped Si1–xGex-source tunneling field-effect transistors (TFETs) with a gate-all-around structure. The band-to-band tunneling rates, tunneling barrier widths, I–V transfer characteristics, threshold voltages, on/off current ratios, and subthreshold swings (SSs) were analyzed by varying the Ge mole fraction of the Si1–xGex source using a commercial device simulator. In particular, a Si0.2Ge0.8-source TFET among our proposed TFETs exhibits an on/off current ratio of approximately 1013, and SS of 27.4 mV/dec.

Phonon limited transport in graphene nanoribbon field effect transistors using full three dimensional quantum mechanical simulation

2012 ◽  
Vol 112 (9) ◽  
pp. 094505 ◽  
Author(s):  
Nima Dehdashti Akhavan ◽  
Gregory Jolley ◽  
Gilberto A. Umana-Membreno ◽  
Jarek Antoszewski ◽  
Lorenzo Faraone
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Graphene Nanoribbon ◽  
Quantum Mechanical ◽  
Mechanical Simulation
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