Room temperature resistive state switching with hysteresis in GdMnO3 thin film with low threshold voltage

2014 ◽  
Vol 104 (18) ◽  
pp. 183508
Author(s):  
Rajib Nath ◽  
A. K. Raychaudhuri ◽  
Ya. M. Mukovskii ◽  
N. Andreev ◽  
Vladimir Chichkov
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Resistive State ◽  
State Switching ◽  
Low Threshold

Cyanophenoxy-Substituted Silicon Phthalocyanines for Low Threshold Voltage n-Type Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Silicon Phthalocyanines ◽  
Low Threshold

scholarly journals Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Zhuofa Chen ◽  
Dedong Han ◽  
Xing Zhang ◽  
Yi Wang
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Channel Structure ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Processing Temperature ◽  
Active Layers ◽  
Low Threshold ◽  
Channel Configuration

AbstractIn this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. The TAL TFTs were found to combine the advantages of SAL TFTs (a low off-state current) and DAL TFTs (a high mobility and a low threshold voltage). The proposed TAL TFTs exhibit superior electrical performance, e.g. a high on-off state current ratio of 2 × 108, a low threshold voltage of 0.63 V, a high field effect mobility of 128.6 cm2/Vs, and a low off-state current of 3.3 pA. The surface morphology and characteristics of the ITO and TZO films were investigated and the TZO film was found to be C-axis-aligned crystalline (CAAC). A simplified resistance model was deduced to explain the channel resistance of the proposed TFTs. At last, TAL TFTs with different channel lengths were also discussed to show the stability and the uniformity of our fabrication process. Owing to its low-processing temperature, superior electrical performance, and low cost, TFTs with the proposed TAL channel configuration are highly promising for flexible displays where the polymeric substrates are heat-sensitive and a low processing temperature is desirable.

Low-threshold-voltage thin-film electroluminescent devices

1981 ◽  
Vol 28 (6) ◽  
pp. 698-702 ◽  
Author(s):  
K. Okamoto ◽  
Y. Nasu ◽  
Y. Hamakawa
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Electroluminescent Devices ◽  
Low Threshold

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

2009 ◽  
Vol 95 (1) ◽  
pp. 013502 ◽  
Author(s):  
Kenji Nomura ◽  
Toshio Kamiya ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Room Temperature

High Performances of Low Temperature (≤ 600°C) Unhydrogenated Polysilicon Thin Film Transistors

1995 ◽  
Vol 403 ◽  
Author(s):  
L. Pichon ◽  
F. Raoult ◽  
K. Mourgues ◽  
O. Bonnaud
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Field Effect Mobility ◽  
Drain Voltage ◽  
Current Ratio ◽  
State Switching ◽  
Polysilicon Layer ◽  
Low Threshold

AbstractLow temperature unhydrogenated polysilicon thin film transistors are elaborated through a fourmask gate aluminium process. Temperature process does not exceed 600°C. Active layer is made of undoped polysilicon layer, an in-situ phosphorus polysilicon layer constitutes source and drain windows and a SiO2 APCVD layer ensures gate insulation. The transistors exhibit electrical properties as good as in the case of hydrogenated ones: a low threshold voltage (VT = 4–5 V), an acceptable optimum field effect mobility (≅ 42 cm2/Vs), a high On/Off state switching, and a high On/Off state current ratio (≅ 107) for a drain voltage equal to 1 V.

Impact of glycerol on Zinc Oxide based thin film transistors with Indium Molybdenum Oxide electrodes

MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 265-268 ◽  
Author(s):  
Mateusz Tomasz Mądzik ◽  
Elangovan Elamurugu ◽  
Raquel Flores ◽  
Jaime Viegas
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Molybdenum Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Drain Current ◽  
Oxide Electrodes ◽  
Common Gate ◽  
Conductivity Medium

ABSTRACTThin-film transistors (TFT) were fabricated at a room-temperature (RT) with zinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. To isolate the gate oxide and gate electrode influence on the device performance, common gate configuration on a commercial substrate with thermal SiO2 (100 nm) was selected. A threshold voltage (VTh) of 10 V and ION/IOFF ratio of 1 × 10-5 were obtained. Once the reference data was taken transistors were exposed to glycerol. Temporary changes in device characteristics were observed due to the influence of glycerol, a low conductivity medium. To exclude the possibility of sugar alcohol being the main conductor, measurement on dummy transistor electrode was performed retaining the distance between probes. The TFT device under test revealed ten times higher drain current but also a change in threshold voltage and leakage current. Transistors under glycerol influence were always open with the positive gate bias.

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