Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Applied Physics Letters ◽

10.1063/1.4897527 ◽

2014 ◽

Vol 105 (14) ◽

pp. 141106 ◽

Author(s):

Xiao-Hang Li ◽

Theeradetch Detchprohm ◽

Tsung-Ting Kao ◽

Md. Mahbub Satter ◽

Shyh-Chiang Shen ◽

...

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Stimulated Emission ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Sapphire Substrates ◽

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Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.98481 ◽

1987 ◽

Vol 51 (4) ◽

pp. 221-223 ◽

Author(s):

Tow C. Chong ◽

Clifton G. Fonstad

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Si Substrates ◽

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Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112192 ◽

1994 ◽

Vol 65 (7) ◽

pp. 892-894 ◽

Author(s):

Guang‐Jye Shiau ◽

Chih‐Ping Chao ◽

Paul E. Burrows ◽

Stephen R. Forrest

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

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Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4898694 ◽

2014 ◽

Vol 32 (6) ◽

pp. 061204 ◽

Author(s):

Fatima Asif ◽

Mohamed Lachab ◽

Antwon Coleman ◽

Iftikhar Ahmad ◽

Bin Zhang ◽

...

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Stimulated Emission ◽

Multiple Quantum ◽

Sapphire Substrates ◽

Deep Ultraviolet

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Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Applied Physics Letters ◽

10.1063/1.4906590 ◽

2015 ◽

Vol 106 (4) ◽

pp. 041115 ◽

Author(s):

Xiao-Hang Li ◽

Tsung-Ting Kao ◽

Md. Mahbub Satter ◽

Yong O. Wei ◽

Shuo Wang ◽

...

Keyword(s):

Quantum Well ◽

Sapphire Substrate ◽

Multiple Quantum Well ◽

Transverse Magnetic ◽

Stimulated Emission ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Deep Ultraviolet

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Low‐threshold and high‐temperature operation of 1.55‐μm self‐aligned ridge‐waveguide multiple‐quantum‐well lasers grown by chemical‐beam epitaxy

Applied Physics Letters ◽

10.1063/1.105681 ◽

1991 ◽

Vol 59 (26) ◽

pp. 3381-3383 ◽

Author(s):

K.‐Y. Liou ◽

W. T. Tsang ◽

F. S. Choa ◽

E. C. Burrows ◽

G. Raybon ◽

...

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Ridge Waveguide ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Chemical Beam Epitaxy ◽

Low Threshold ◽

High Temperature Operation

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Low threshold 1.55 μm compressive-strained multiple quantum well lasers for high temperature and high power operation

10.1109/edms.1994.863851 ◽

2005 ◽

Author(s):

Chwan-Yang Chang ◽

Wei Lin ◽

Ming-Cheng Wang ◽

Tian-Tsorng Shi ◽

Jau-Yang Su ◽

...

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

High Power Operation ◽

Low Threshold ◽

Power Operation

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VB-5 room temperature low-threshold AlGaAs/GaAs multiple quantum well lasers grown directly on Si substrates with thin buffer layers

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23302 ◽

1987 ◽

Vol 34 (11) ◽

pp. 2379-2380

Author(s):

T.C. Chong ◽

C.G. Fonstad

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Buffer Layers ◽

Multiple Quantum ◽

Si Substrates ◽

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Low threshold 1.55 μm compressive-strained multiple quantum well lasers for high temperature and high power operation

10.1109/edms.1994.771305 ◽

2005 ◽

Author(s):

Chwan-Yang Chang ◽

Wei Lin ◽

Ming-Cheng Wang ◽

Tian-Tsorng Shi ◽

Jau-Yang Su ◽

...

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

High Power Operation ◽

Low Threshold ◽

Power Operation

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Very low threshold current density 1.3 µm InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers

Electronics Letters ◽

10.1049/el:19951223 ◽

1995 ◽

Vol 31 (20) ◽

pp. 1749-1750 ◽

Author(s):

A. Kasukawa ◽

N. Yamanaka ◽

N. Yokouchi ◽

N. Iwai

Keyword(s):

Quantum Well ◽

Current Density ◽

Multiple Quantum Well ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

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Low threshold pulsed and continuous‐wave laser action in optically pumped (Zn,Cd)Se/ZnSe multiple quantum well lasers in the blue‐green

Applied Physics Letters ◽

10.1063/1.105479 ◽

1991 ◽

Vol 59 (11) ◽

pp. 1293-1295 ◽

Author(s):

H. Jeon ◽

J. Ding ◽

A. V. Nurmikko ◽

H. Luo ◽

N. Samarth ◽

...

Keyword(s):

Quantum Well ◽

Continuous Wave ◽

Multiple Quantum Well ◽

Laser Action ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Continuous Wave Laser ◽

Optically Pumped ◽

Low Threshold ◽

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