Surface half-metallicity of CrS thin films and perfect spin filtering and spin diode effects of CrS/ZnSe heterostructure

2014 ◽  
Vol 105 (18) ◽  
pp. 182405 ◽  
Author(s):  
G. Y. Gao ◽  
K. L. Yao
2019 ◽  
Vol 150 (6) ◽  
pp. 064701 ◽  
Author(s):  
Xuming Wu ◽  
Lun Xiong ◽  
Yulin Feng ◽  
Cong Wang ◽  
Guoying Gao

2020 ◽  
Vol 32 (32) ◽  
pp. 325001
Author(s):  
Iltaf Muhammad ◽  
Jian-Min Zhang ◽  
Anwar Ali ◽  
Muhammad Mushtaq ◽  
Suleman Muhammad

SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440022 ◽  
Author(s):  
M. S. GABOR ◽  
M. BELMEGUENAI ◽  
F. ZIGHEM ◽  
S. M. CHERIF ◽  
T. PETRISOR ◽  
...  

This paper presents an overview concerning the electronic, structural and magnetic properties of Co 2 FeAl (CFA) thin films. We first used ab initio calculations of the electronic structure in order to discuss the half-metallicity of this compound. Involving a correlated structural-magnetic analysis, we then illustrate, experimentally, the effect of the thickness as well as the annealing temperature on the magnetic and structural properties of CFA films epitaxially grown on MgO (001) single crystal substrates. The X-ray diffraction shows that in our samples having the CFA(001)[110]// MgO (001)[100] epitaxial relation, the chemical order is enhanced as the thickness and the annealing temperature (T a ) are increased. Ferromagnetic resonance measurements reveal further dynamic magnetic properties. The gyromagnetic factor, estimated at 29.2 GHz/T, is both thickness and annealing temperature independent. The in-plane anisotropy results from the superposition between a dominant fourfold symmetry term, as expected for cubic crystal symmetry of the alloy, and a small uniaxial term. The fourfold anisotropy decreases with increasing thickness and annealing temperature. The exchange stiffness constant is thickness independent but increases with T a . In addition, the effective magnetization varies linearly with T a and with the inverse CFA thickness. This is due to the presence of perpendicular uniaxial anisotropy, estimated around -1.8 erg/cm2 at T a = 600°C and 1.05 erg/cm2 at T a = 265°C, respectively. Frequency and angular dependences of the FMR linewidth show two magnon scattering and mosaicity contributions which depend on the CFA thickness and T a . A Gilbert damping coefficient as low as 0.0011 is found for samples annealed at 600°C. Finally, we illustrate that these films can be used as ferromagnetic electrodes in sputtered epitaxial magnetic tunnel junctions (MTJ) based on MgO (001) tunnel barriers. These MTJs show an improvable TMR ratio around 95% at room temperature.


2016 ◽  
Vol 109 (14) ◽  
pp. 142410 ◽  
Author(s):  
Y. Jin ◽  
P. Kharel ◽  
S. R. Valloppilly ◽  
X.-Z. Li ◽  
D. R. Kim ◽  
...  
Keyword(s):  

RSC Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 3550-3557 ◽  
Author(s):  
Jiangchao Han ◽  
Jimei Shen ◽  
Guoying Gao

Spin-dependent device density of states in the CrO2/TiO2/CrO2 magnetic tunnel junction.


Author(s):  
Atish Ghosh ◽  
Moumita Kar ◽  
Chiranjib Majumder ◽  
Pranab Sarkar

Half metallic vanadium nitride nanoribbons with intrinsic ferromagnetism and 100% spin filtering efficiency.


2016 ◽  
Vol 4 (46) ◽  
pp. 10866-10875 ◽  
Author(s):  
Jiao Li ◽  
Xinyu Fan ◽  
Yanpei Wei ◽  
Jinxiang Liu ◽  
Jinghua Guo ◽  
...  

An Mn stabilized boron sheet shows many unique properties, such as novel voltage-gated spin-filtering properties and oxidization induced half-metallicity.


2016 ◽  
Vol 18 (40) ◽  
pp. 28018-28023 ◽  
Author(s):  
Jie Li ◽  
Guoying Gao ◽  
Yi Min ◽  
Kailun Yao

The device based on the YN2 monolayer with dual spin filtering and dual spin diode effects.


2015 ◽  
Vol 233-234 ◽  
pp. 643-647 ◽  
Author(s):  
Oksana Koplak ◽  
Alexey Polyakov ◽  
Alexander Davydov ◽  
Roman Morgunov ◽  
Artem Talantsev ◽  
...  

Effect of charge carriers concentration on magnetic parameters of the ferromagnetic MnSb nanoclusters as well as opposite effect of cluster magnetization on spin polarization of holes and magnetoresistance were observed in GaSbMn thin films. Microwave magneto-resistance effect is evidence of the charge carriers spin filtering by ferromagnetic clusters.


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