Spin Filtering on the MnSb Cluster Interface in GaSbMn Thin Films

Effect of charge carriers concentration on magnetic parameters of the ferromagnetic MnSb nanoclusters as well as opposite effect of cluster magnetization on spin polarization of holes and magnetoresistance were observed in GaSbMn thin films. Microwave magneto-resistance effect is evidence of the charge carriers spin filtering by ferromagnetic clusters.

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Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filtering

Nature Photonics ◽

10.1038/s41566-021-00786-y ◽

2021 ◽

Author(s):

Yuqing Huang ◽

Ville Polojärvi ◽

Satoshi Hiura ◽

Pontus Höjer ◽

Arto Aho ◽

...

Keyword(s):

Spin Polarization ◽

Electron Spin ◽

Room Temperature ◽

Electron Spin Polarization ◽

Semiconductor Nanostructure ◽

Temperature Electron ◽

Spin Filtering

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Intra‐Island Coulomb Correlations in PEDOT:PSS Thin Films; Saturation of Spin Polarization Magnetoresistance

Advanced Electronic Materials ◽

10.1002/aelm.202001033 ◽

2021 ◽

Vol 7 (4) ◽

pp. 2001033

Author(s):

Daniel Nikiforov ◽

Nir Tessler ◽

Eitan Ehrenfreund

Keyword(s):

Thin Films ◽

Spin Polarization ◽

Coulomb Correlations

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Transport mechanisms in Co-doped ZnO (ZCO) and H-irradiated ZCO polycrystalline thin films

Physical Chemistry Chemical Physics ◽

10.1039/d0cp06401g ◽

2021 ◽

Vol 23 (3) ◽

pp. 2368-2376

Author(s):

A. Di Trolio ◽

A. Amore Bonapasta ◽

C. Barone ◽

A. Leo ◽

G. Carapella ◽

...

Keyword(s):

Thin Films ◽

Opposite Effect ◽

Transport Mechanisms ◽

Co Doping ◽

Polycrystalline Thin Films ◽

Doped Zno ◽

Co Doped

Co doping increases the ZnO resistivity (ρ) at high T (HT), whereas it has an opposite effect at low T (LT). H balances the Co effects by neutralizing the ρ increase at HT and strengthening its decrease at LT.

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ITO Thin Films on Silicon Buffer by Sol Gel Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.514-516.1155 ◽

2006 ◽

Vol 514-516 ◽

pp. 1155-1160 ◽

Cited By ~ 1

Author(s):

Talaat Moussa Hammad

Keyword(s):

Thin Films ◽

Indium Tin Oxide ◽

Optical Transmission ◽

Sol Gel ◽

Precursor Solution ◽

Charge Carriers ◽

X Ray Diffraction ◽

X Ray ◽

Ito Thin Films ◽

Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

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Magneto-resistance of organic spin valves due to spin-polarized tunnel injection and extraction of charge carriers

Journal of Applied Physics ◽

10.1063/1.3681173 ◽

2012 ◽

Vol 111 (3) ◽

pp. 034505 ◽

Cited By ~ 3

Author(s):

A. Goswami ◽

M. Yunus ◽

P. P. Ruden ◽

D. L. Smith

Keyword(s):

Charge Carriers ◽

Spin Valves ◽

Spin Polarized ◽

Magneto Resistance ◽

Tunnel Injection

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Influence of oxidation on the spin-filtering properties ofCoFe2O4and the resultant spin polarization

Physical Review B ◽

10.1103/physrevb.78.180402 ◽

2008 ◽

Vol 78 (18) ◽

Cited By ~ 79

Author(s):

A. V. Ramos ◽

T. S. Santos ◽

G. X. Miao ◽

M.-J. Guittet ◽

J.-B. Moussy ◽

...

Keyword(s):

Spin Polarization ◽

Spin Filtering

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Effect of photonic processing of rutile thin films with cadmium sulfide quantum dots on the formation of conditions for the separation of nonequilibrium charge carriers

Оптический журнал ◽

10.17586/1023-5086-2020-87-02-69-75 ◽

2020 ◽

Keyword(s):

Thin Films ◽

Quantum Dots ◽

Cadmium Sulfide ◽

Charge Carriers ◽

Nonequilibrium Charge Carriers ◽

Photonic Processing

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Edge Absorption of thin Films –Ga2O3

Фізика і хімія твердого тіла ◽

10.15330/pcss.16.2.302-306 ◽

2015 ◽

Vol 16 (2) ◽

pp. 302-306

Author(s):

O.M. Bordun ◽

B.O. Bordun ◽

V.B. Lushchanets ◽

I.Yo. Kukharskyy

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Absorption Edge ◽

Optical Band Gap ◽

Fundamental Absorption Edge ◽

Hydrogen Atmosphere ◽

Argon Atmosphere ◽

Charge Carriers ◽

Free Charge ◽

Moss Effect

Fundamental absorption edge of b–Ga2O3 thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated, using the method of optical spectroscopy. It was ascertained that the optical band gap Eg increases from 4.60 to 4.65 eV after the heat treatment films in argon atmosphere and to 5.20 eV after the reduction of annealed films in a hydrogen atmosphere. Consolidated effective mass of free charge carriers in b–Ga2O3 films after annealing and after reduction in hydrogen was estimated. It was found that the concentration of charge carriers after heat treatment in argon atmosphere is 7.30´1017 cm–3 and after reduction in hydrogen, is 2.62´1019 cm–3, which is typical for degenerated semiconductors. It was shown that the shift of fundamental absorption edge in thin films b–Ga2O3 after reduction in hydrogen is caused by Burstein-Moss effect.

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