Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

2014 ◽  
Vol 105 (19) ◽  
pp. 192103 ◽  
Author(s):  
Hanhui Liu ◽  
Peng Wang ◽  
Dongfeng Qi ◽  
Xin Li ◽  
Xiang Han ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ohmic Contact ◽  
Schottky Barrier Height ◽  
Contact Formation ◽  
Ohmic Contact Formation

Ohmic Contact Formation Mechanism of Pd-based Contact to p-GaN

2000 ◽  
Vol 622 ◽  
Author(s):  
Dae-Woo Kim ◽  
Joon Cheol Bae ◽  
Woo Jin Kim ◽  
Hong Koo Baik ◽  
Chong Cook Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Formation Mechanism ◽  
Ohmic Contact ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Contact Formation ◽  
Ohmic Behavior ◽  
Plane Direction ◽  
Ohmic Contact Formation

ABSTRACTWe have investigated surface treatment effect on the interfacial reaction of Pd/p-GaN interface and also room temperature ohmic contact formation mechanism of Pd-based ohmic contact. In order to examine room temperature ohmic behavior, various metal contact systems were deposited and current-voltage measurements were carried out. In spite of large theoretical Schottky barrier height between Pd and p-GaN, Pd-based contact showed perfect ohmic characteristic even before annealing. According to the results of synchrotron X-ray radiation, the closed-packed atomic planes (111) of the Pd film were quite well ordered in surface normal direction as well as in the in-plane direction. The effective Schottky barrier height of Au/Pd/Mg/Pd/p-GaN was 0.47eV, which was estimated by Norde method. This discrepancy between theoretical barrier height and the measured one might be due to the epitaxial growth of Pd contact metal and so the room-temperature ohmic characteristic of Pd-based ohmic contact was related strongly to the in-plane epitaxial quality of metal on p-GaN.

Low Resistance Ohmic Contact on ZnO Thin Film Revealed by Schottky Barrier Height

Silicon ◽  
2021 ◽  
Author(s):  
Basavaraj S. Sannakashappanavar ◽  
Aniruddh B. Yadav ◽  
Vinod Kumar ◽  
N. V. L. Narasimha Murty ◽  
K. Singh
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ohmic Contact ◽  
Schottky Barrier Height ◽  
Zno Thin Film ◽  
Low Resistance

Ideal Ohmic contact to n-type 6H-SiC by reduction of Schottky barrier height

1997 ◽  
Vol 71 (5) ◽  
pp. 689-691 ◽  
Author(s):  
T. Teraji ◽  
S. Hara ◽  
H. Okushi ◽  
K. Kajimura
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ohmic Contact ◽  
Schottky Barrier Height

Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC

2002 ◽  
Vol 46 (12) ◽  
pp. 2063-2067 ◽  
Author(s):  
Tomonori Nakamura ◽  
Masataka Satoh
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ohmic Contact ◽  
Schottky Barrier Height

A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation

2000 ◽  
Vol 338-342 ◽  
pp. 1025-1028 ◽  
Author(s):  
A. Kestle ◽  
S.P. Wilks ◽  
P.R. Dunstan ◽  
M. Pritchard ◽  
G. Pope ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Facet Engineering of Pd Nanocrystals for Enhancing Photocatalytic Hydrogenation: Modulation of the Schottky Barrier Height and Enrichment of Surface Reactants

2021 ◽  
Vol 13 (11) ◽  
pp. 13044-13054
Author(s):  
Suwei Lu ◽  
Bo Weng ◽  
Aizhu Chen ◽  
Xinwei Li ◽  
Haowei Huang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements
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