New method of preparing (100) InP surfaces for schottky barrier and ohmic contact formation

1980 ◽  
Vol 9 (1) ◽  
pp. 67-78 ◽  
Author(s):  
D. K. Skinner
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contact ◽  
New Method ◽  
Contact Formation ◽  
Ohmic Contact Formation

Ohmic Contact Formation Mechanism of Pd-based Contact to p-GaN

2000 ◽  
Vol 622 ◽  
Author(s):  
Dae-Woo Kim ◽  
Joon Cheol Bae ◽  
Woo Jin Kim ◽  
Hong Koo Baik ◽  
Chong Cook Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Formation Mechanism ◽  
Ohmic Contact ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Contact Formation ◽  
Ohmic Behavior ◽  
Plane Direction ◽  
Ohmic Contact Formation

ABSTRACTWe have investigated surface treatment effect on the interfacial reaction of Pd/p-GaN interface and also room temperature ohmic contact formation mechanism of Pd-based ohmic contact. In order to examine room temperature ohmic behavior, various metal contact systems were deposited and current-voltage measurements were carried out. In spite of large theoretical Schottky barrier height between Pd and p-GaN, Pd-based contact showed perfect ohmic characteristic even before annealing. According to the results of synchrotron X-ray radiation, the closed-packed atomic planes (111) of the Pd film were quite well ordered in surface normal direction as well as in the in-plane direction. The effective Schottky barrier height of Au/Pd/Mg/Pd/p-GaN was 0.47eV, which was estimated by Norde method. This discrepancy between theoretical barrier height and the measured one might be due to the epitaxial growth of Pd contact metal and so the room-temperature ohmic characteristic of Pd-based ohmic contact was related strongly to the in-plane epitaxial quality of metal on p-GaN.

Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

2014 ◽  
Vol 105 (19) ◽  
pp. 192103 ◽  
Author(s):  
Hanhui Liu ◽  
Peng Wang ◽  
Dongfeng Qi ◽  
Xin Li ◽  
Xiang Han ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ohmic Contact ◽  
Schottky Barrier Height ◽  
Contact Formation ◽  
Ohmic Contact Formation

A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation

2000 ◽  
Vol 338-342 ◽  
pp. 1025-1028 ◽  
Author(s):  
A. Kestle ◽  
S.P. Wilks ◽  
P.R. Dunstan ◽  
M. Pritchard ◽  
G. Pope ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN

2008 ◽  
Vol 41 (17) ◽  
pp. 175105
Author(s):  
Yow-Jon Lin ◽  
Feng-Tso Chien ◽  
Ching-Ting Lee ◽  
Chi-Shin Lin ◽  
Yang-Chun Liu
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Al-nGaAs ohmic contact formation by H2SeO3 treatment and annealing

2001 ◽  
Author(s):  
Sarunas Meskinis ◽  
Kestutis Slapikas ◽  
R. Gudaitis
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing

2000 ◽  
Vol 338-342 ◽  
pp. 1619-1619
Author(s):  
L.S. Tan ◽  
A. Raman ◽  
K.M. Ng ◽  
S.J. Chua ◽  
A.T.S. Wee ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Science And Technology ◽  
Contact Formation ◽  
Low Temperature Annealing ◽  
Silicon Doped ◽  
Ohmic Contact Formation ◽  
Double Publication

“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317

Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

2017 ◽  
Vol 215 (9) ◽  
pp. 1700516
Author(s):  
Ievgen Boturchuk ◽  
Leopold Scheffler ◽  
Arne Nylandsted Larsen ◽  
Brian Julsgaard
Keyword(s):  
Heat Treatment ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation

2003 ◽  
Vol 82 (5) ◽  
pp. 736-738 ◽  
Author(s):  
H. Tang ◽  
J. A. Bardwell ◽  
J. B. Webb ◽  
S. Rolfe ◽  
Y. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Treatment ◽  
Ohmic Contact ◽  
Molecular Beam ◽  
Contact Formation ◽  
P Type ◽  
Ohmic Contact Formation
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