A two-dimensional analytical model for short channel junctionless double-gate MOSFETs

AIP Advances ◽

10.1063/1.4921086 ◽

2015 ◽

Vol 5 (5) ◽

pp. 057122 ◽

Author(s):

Chunsheng Jiang ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Analytical Model ◽

Double Gate ◽

Two Dimensional ◽

Download Full-text

A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Download Full-text

A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3488605 ◽

2010 ◽

Vol 108 (7) ◽

pp. 074508 ◽

Author(s):

Pramod Kumar Tiwari ◽

Sarvesh Dubey ◽

Manjeet Singh ◽

S. Jit

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Download Full-text

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

Chinese Physics B ◽

10.1088/1674-1056/23/11/118505 ◽

2014 ◽

Vol 23 (11) ◽

pp. 118505 ◽

Author(s):

Shweta Tripathi

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

Short Channel ◽

Channel Potential ◽

Dual Material ◽

Lightly Doped Drain

Download Full-text

A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET’s

Microelectronics Reliability ◽

10.1016/j.microrel.2009.05.006 ◽

2009 ◽

Vol 49 (7) ◽

pp. 693-698 ◽

Author(s):

Te-Kuang Chiang

Keyword(s):

Behavior Model ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Download Full-text

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

Journal of Semiconductors ◽

10.1088/1674-4926/38/2/024004 ◽

2017 ◽

Vol 38 (2) ◽

pp. 024004

Author(s):

Huifang Xu ◽

Yuehua Dai

Keyword(s):

Analytical Model ◽

Charge Carriers ◽

Double Gate ◽

Two Dimensional ◽

Mobile Charge ◽

Download Full-text

A new two-dimensional analytical model for short-channel Tri-material gate-stack SOI MOSFET’s

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760750 ◽

2008 ◽

Author(s):

T.K. Chiang

Keyword(s):

Analytical Model ◽

Two Dimensional ◽

Short Channel ◽

Download Full-text

A Two-Dimensional (2D) Analytical Model for Sub-threshold Current and Sub-threshold Swing for Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET

International Journal of Thin Films Science and Technology ◽

10.18576/ijtfst/090204 ◽

2020 ◽

Vol 9 (2) ◽

pp. 111-118

Keyword(s):

Analytical Model ◽

Threshold Current ◽

Two Dimensional ◽

Short Channel ◽

Download Full-text

Analytical Model of Short-Channel Double-Gate JFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2051193 ◽

2010 ◽

Vol 57 (8) ◽

pp. 1846-1855 ◽

Author(s):

Jiwon Chang ◽

Ashok K. Kapoor ◽

Leonard F. Register ◽

Sanjay K. Banerjee

Keyword(s):

Analytical Model ◽

Double Gate ◽

Download Full-text

Two‐dimensional models for quantum effects on short channel electrostatics of lightly doped symmetric double‐gate MOSFETs

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2017.0046 ◽

2018 ◽

Vol 12 (4) ◽

pp. 341-346 ◽

Author(s):

Rana Y. El Kashlan ◽

Hamdy Abd El Hamid ◽

Yehea I. Ismail

Keyword(s):

Quantum Effects ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dimensional Models

Download Full-text

Two-dimensional analytical model for drain induced barrier lowering (DIBL) in short channel MOSFETs

Proceedings of the IEEE SoutheastCon 2000. 'Preparing for The New Millennium' (Cat. No.00CH37105) ◽

10.1109/secon.2000.845589 ◽

2002 ◽

Author(s):

A.A. Mutlu ◽

M. Rahman

Keyword(s):

Analytical Model ◽

Two Dimensional ◽

Download Full-text