Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

2017 ◽  
Vol 38 (2) ◽  
pp. 024004
Author(s):  
Huifang Xu ◽  
Yuehua Dai
Keyword(s):  
Analytical Model ◽  
Charge Carriers ◽  
Double Gate ◽  
Two Dimensional ◽  
Mobile Charge ◽  
Tunnel Fets

scholarly journals Photoexcitation of PbS nanosheets leads to highly mobile charge carriers and stable excitons

Nanoscale ◽  
2019 ◽  
Vol 11 (44) ◽  
pp. 21569-21576 ◽  
Author(s):  
Jannika Lauth ◽  
Michele Failla ◽  
Eugen Klein ◽  
Christian Klinke ◽  
Sachin Kinge ◽  
...  
Keyword(s):  
Charge Carriers ◽  
Two Dimensional ◽  
Mobile Charge ◽  
Solution Processed

Colloidal two-dimensional (2D) PbS nanosheets exhibit stable excitons and highly mobile charge carriers (500–1000 cm2 V−1 s−1) rendering solution-processed nanomaterials suitable for ultrathin optoelectronics.

Improved analytical model of surface potential with modified boundary conditions for double gate tunnel FETs

2017 ◽  
Vol 79 ◽  
pp. 231-238 ◽  
Author(s):  
Bin Lu ◽  
Hongliang Lu ◽  
Yuming Zhang ◽  
Yimen Zhang ◽  
Xiaoran Cui ◽  
...  
Keyword(s):  
Boundary Conditions ◽  
Analytical Model ◽  
Surface Potential ◽  
Double Gate ◽  
Tunnel Fets

scholarly journals A two-dimensional analytical model for short channel junctionless double-gate MOSFETs

AIP Advances ◽  
2015 ◽  
Vol 5 (5) ◽  
pp. 057122 ◽  
Author(s):  
Chunsheng Jiang ◽  
Renrong Liang ◽  
Jing Wang ◽  
Jun Xu
Keyword(s):  
Analytical Model ◽  
Double Gate ◽  
Two Dimensional ◽  
Short Channel

Two-dimensional analytical model for asymmetric dual-gate tunnel FETs

2016 ◽  
Vol 56 (1) ◽  
pp. 014301
Author(s):  
Hui Fang Xu ◽  
Yue Hua Dai ◽  
Bang Gui Guan ◽  
Yong Feng Zhang
Keyword(s):  
Analytical Model ◽  
Two Dimensional ◽  
Dual Gate ◽  
Tunnel Fets

Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model

2013 ◽  
Vol 60 (2) ◽  
pp. 884-886 ◽  
Author(s):  
Mike Schwarz ◽  
Thomas Holtij ◽  
Alexander Kloes ◽  
Benjamín Iniguez
Keyword(s):  
Schottky Barrier ◽  
Analytical Model ◽  
Double Gate ◽  
Two Dimensional ◽  
Performance Study ◽  
Double Gate Mosfet
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