scholarly journals Communication: Surface stability and topological surface states of cleaved Bi2Se3: First-principles studies

2015 ◽  
Vol 143 (15) ◽  
pp. 151101 ◽  
Author(s):  
Y. N. Zhang
Keyword(s):  
First Principles ◽  
Surface States ◽  
Surface Stability ◽  
Topological Surface

scholarly journals Manifestation of axion electrodynamics through magnetic ordering on edges of a topological insulator

2015 ◽  
Vol 112 (37) ◽  
pp. 11514-11518 ◽  
Author(s):  
Yea-Lee Lee ◽  
Hee Chul Park ◽  
Jisoon Ihm ◽  
Young-Woo Son
Keyword(s):  
Electric Field ◽  
Topological Insulator ◽  
Time Reversal ◽  
First Principles ◽  
Surface States ◽  
Magnetic Ordering ◽  
Crystal Face ◽  
Magnetic Dipoles ◽  
Topological Surface ◽  
The Difference

Because topological surface states of a single-crystal topological insulator can exist on all surfaces with different crystal orientations enclosing the crystal, mutual interactions among those states contiguous to each other through edges can lead to unique phenomena inconceivable in normal insulators. Here we show, based on a first-principles approach, that the difference in the work function between adjacent surfaces with different crystal-face orientations generates a built-in electric field around facet edges of a prototypical topological insulator such as Bi2Se3. Owing to the topological magnetoelectric coupling for a given broken time-reversal symmetry in the crystal, the electric field, in turn, forces effective magnetic dipoles to accumulate along the edges, realizing the facet-edge magnetic ordering. We demonstrate that the predicted magnetic ordering is in fact a manifestation of the axion electrodynamics in real solids.

scholarly journals First-principles study of the topological surface states of α-Sn(111)

2020 ◽  
Vol 384 (30) ◽  
pp. 126782
Author(s):  
Zhibin Shi ◽  
Xiaoxiong Wang ◽  
Caizhi Xu ◽  
Peng Wang ◽  
Yang Liu ◽  
...  
Keyword(s):  
First Principles ◽  
Surface States ◽  
First Principles Study ◽  
Topological Surface

Topological states modulation of Bi and Sb thin films by atomic adsorption

2015 ◽  
Vol 17 (5) ◽  
pp. 3577-3583 ◽  
Author(s):  
Dongchao Wang ◽  
Li Chen ◽  
Hongmei Liu ◽  
Xiaoli Wang ◽  
Guangliang Cui ◽  
...  
Keyword(s):  
Thin Films ◽  
First Principles ◽  
Surface States ◽  
First Principles Calculations ◽  
Atomic Adsorption ◽  
Topological States ◽  
Topological Surface

Based on first-principles calculations, we systematically investigated the topological surface states of Bi and Sb thin films of 1–5 bilayers in (111) orientation without and with H(F) adsorption, respectively.

Topological dual double node-line semimetals NaAlSi(Ge) and their potential as cathode material for sodium ion batteries

2019 ◽  
Vol 7 (48) ◽  
pp. 15375-15381 ◽  
Author(s):  
X. Yi ◽  
W. Q. Li ◽  
Z. H. Li ◽  
P. Zhou ◽  
Z. S. Ma ◽  
...  
Keyword(s):  
Cathode Material ◽  
First Principles ◽  
Surface States ◽  
Sodium Ion ◽  
Effective Model ◽  
Sodium Ion Batteries ◽  
The Real ◽  
Real Material ◽  
Topological Surface ◽  
First Principles Method

Using a first-principles method and an effective model, we propose that the real material family NaAlSi(Ge) behaves as dual double node-line semimetals (DNLSs) with unconventional topological surface states.

Large Damping Enhancement in Dirac‐Semimetal–Ferromagnetic‐Metal Layered Structures Caused by Topological Surface States

2021 ◽  
pp. 2008411
Author(s):  
Jinjun Ding ◽  
Chuanpu Liu ◽  
Yuejie Zhang ◽  
Vijaysankar Kalappattil ◽  
Rui Yu ◽  
...  
Keyword(s):  
Surface States ◽  
Layered Structures ◽  
Ferromagnetic Metal ◽  
Dirac Semimetal ◽  
Topological Surface

scholarly journals Discovery of a weak topological insulating state and van Hove singularity in triclinic RhBi2

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kyungchan Lee ◽  
Gunnar F. Lange ◽  
Lin-Lin Wang ◽  
Brinda Kuthanazhi ◽  
Thaís V. Trevisan ◽  
...  
Keyword(s):  
Time Reversal ◽  
Topological Insulators ◽  
Dirac Point ◽  
Saddle Points ◽  
Surface States ◽  
Van Hove Singularity ◽  
Space Group ◽  
Topological Materials ◽  
Topological Surface ◽  
Optimal Space

AbstractTime reversal symmetric (TRS) invariant topological insulators (TIs) fullfil a paradigmatic role in the field of topological materials, standing at the origin of its development. Apart from TRS protected strong TIs, it was realized early on that more confounding weak topological insulators (WTI) exist. WTIs depend on translational symmetry and exhibit topological surface states only in certain directions making it significantly more difficult to match the experimental success of strong TIs. We here report on the discovery of a WTI state in RhBi2 that belongs to the optimal space group P$$\bar{1}$$ 1 ¯ , which is the only space group where symmetry indicated eigenvalues enumerate all possible invariants due to absence of additional constraining crystalline symmetries. Our ARPES, DFT calculations, and effective model reveal topological surface states with saddle points that are located in the vicinity of a Dirac point resulting in a van Hove singularity (VHS) along the (100) direction close to the Fermi energy (EF). Due to the combination of exotic features, this material offers great potential as a material platform for novel quantum effects.

Fermi level tuning and the robustness of topological surface states against impurity doping in Sn doped Sb2Te2Se

2021 ◽  
Vol 118 (15) ◽  
pp. 154001
Author(s):  
Debarghya Mallick ◽  
Shoubhik Mandal ◽  
R. Ganesan ◽  
P. S. Anil Kumar
Keyword(s):  
Fermi Level ◽  
Surface States ◽  
Impurity Doping ◽  
Topological Surface

scholarly journals 2D weak anti-localization in thin films of the topological semimetal Pd$$_{3}$$Bi$$_{2}$$S$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shama ◽  
R. K. Gopal ◽  
Goutam Sheet ◽  
Yogesh Singh
Keyword(s):  
Thin Films ◽  
Phonon Scattering ◽  
Surface States ◽  
Relaxation Mechanism ◽  
Transport Studies ◽  
Bulk Carriers ◽  
Topological Semimetal ◽  
Topological Surface ◽  
First Time ◽  
Electron Phonon Scattering

AbstractPd$$_{3}$$ 3 Bi$$_{2}$$ 2 S$$_{2}$$ 2 (PBS) is a recently proposed topological semimetal candidate. However, evidence for topological surface states have not yet been revealed in transport measurements due to the large mobility of bulk carriers. We report the growth and magneto-transport studies of PBS thin films where the mobility of the bulk carriers is reduced by two orders of magnitude, revealing for the first time, contributions from the 2-dimensional (2D) topological surface states in the observation of the 2D weak anti-localization (WAL) effect in magnetic field and angle dependent conductivity measurements. The magnetotransport data is analysed within the 2D Hikami-Larkin-Nagaoka (HLN) theory. The analysis suggests that multiple conduction channels contribute to the transport. It is also found that the temperature dependence of the dephasing length can’t be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.

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