Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors

2015 ◽  
Vol 118 (19) ◽  
pp. 195703 ◽  
Author(s):  
Hyo-Eun Jung ◽  
Mincheol Shin
Keyword(s):  
Surface Roughness ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Surface Roughness Scattering ◽  
Scattering Effects

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

2004 ◽  
Vol 84 (8) ◽  
pp. 1395-1397 ◽  
Author(s):  
Shin-ichi Saito ◽  
Kazuyoshi Torii ◽  
Yasuhiro Shimamoto ◽  
Shimpei Tsujikawa ◽  
Hirotaka Hamamura ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Surface Roughness Scattering

scholarly journals Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET

2020 ◽  
Vol 10 (8) ◽  
pp. 2979
Author(s):  
Soohyun Kim ◽  
Jungchun Kim ◽  
Doyoung Jang ◽  
Romain Ritzenthaler ◽  
Bertrand Parvais ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Temperature Dependence ◽  
Field Effect ◽  
Carrier Transport ◽  
Phonon Scattering ◽  
Field Effect Transistors ◽  
Effective Field ◽  
Temperature Dependent ◽  
Surface Roughness Scattering ◽  
Wide Range

The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25–125 °C). A similar temperature dependence of threshold voltage (VTH) and subthreshold swing (SS) is observed for both devices. However, effective mobility (μeff) shows significant differences of temperature dependence between GAA NW-FET and FinFET at a high gate effective field. At weak Ninv (= 5 × 1012 cm2/V∙s), both GAA NW-FET and FinFET are mainly limited by phonon scattering in μeff. On the other hand, at strong Ninv (= 1.5 × 1013 cm2/V∙s), GAA NW-FET shows 10 times higher dμeff/dT and 1.6 times smaller mobility degradation coefficient (α) than FinFET. GAA NW-FET is less limited by surface roughness scattering, but FinFET is relatively more limited by surface roughness scattering in carrier transport.

Electrostatics of coaxial schottky-barrier nanotube field-effect transistors

2003 ◽  
Vol 2 (3) ◽  
pp. 175-180 ◽  
Author(s):  
D.L. John ◽  
L.C. Castro ◽  
J. Clifford ◽  
D.L. Pulfrey
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors

4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses

2021 ◽  
Author(s):  
Fengben Xi ◽  
Yi Han ◽  
Andreas Tiedemann ◽  
Detlev Grutzmacher ◽  
Qing-Tai Zhao
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors

Role of Schottky Barrier and Access Resistance in Organic Field-Effect Transistors

2020 ◽  
Vol 11 (4) ◽  
pp. 1466-1472 ◽  
Author(s):  
Qijing Wang ◽  
Sai Jiang ◽  
Bowen Zhang ◽  
Eul-Yong Shin ◽  
Yong-Young Noh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Access Resistance
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