The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

2016 ◽  
Vol 119 (9) ◽  
pp. 095104 ◽  
Author(s):  
Poppy Siddiqua ◽  
Stephen K. O'Leary
Keyword(s):  
Steady State ◽  
Electron Transport ◽  
Doping Concentration ◽  
Indium Nitride ◽  
Crystal Temperature ◽  
Zinc Blende ◽  
The Impact

How changes in the crystal temperature and the doping concentration impact upon bulk wurtzite zinc oxide’s electron transport response

MRS Advances ◽  
2019 ◽  
Vol 4 (50) ◽  
pp. 2673-2678
Author(s):  
Poppy Siddiqua ◽  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Drift Velocity ◽  
Doping Concentration ◽  
Electron Drift ◽  
Crystal Temperature ◽  
Transient Transport ◽  
Transport Response ◽  
The Impact

ABSTRACTThe role that changes in the crystal temperature and the doping concentration play in shaping the character of the steady-state and transient transport response of electrons within bulk wurtzite zinc oxide will be examined. Monte Carlo electron transport simulations are drawn upon for the purposes of this analysis. We find that both the crystal temperature and the doping concentration greatly influence the character of the steady-state and transient electron transport response. In particular, for the case of steady-state electron transport, the peak drift velocity decreases by 30% as the crystal temperature is increased from 100 to 700 K, this decrease in velocity being only 20% as the doping concentration is increased from 1015 to 1019 cm-3. The impact on the transient electron drift velocity is not as acute.

Steady-state and transient electron transport within wurtzite and zinc-blende indium nitride

2013 ◽  
Vol 113 (11) ◽  
pp. 113709 ◽  
Author(s):  
Walid A. Hadi ◽  
Prabhjot K. Guram ◽  
Michael S. Shur ◽  
Stephen K. O'Leary
Keyword(s):  
Steady State ◽  
Electron Transport ◽  
Indium Nitride ◽  
Zinc Blende

Modeling of a Breakdown Voltage in GaN Rectifiers and SiC Rectifiers

2001 ◽  
Vol 680 ◽  
Author(s):  
You-Sang Lee ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Impact Ionization ◽  
Accurate Approximation ◽  
Ionization Coefficient ◽  
Zinc Blende ◽  
The Impact

ABSTRACTThe breakdown voltage of wurtzite and zinc-blende GaN rectifiers as function of a doping concentration and the width of epitaxial layer were successfully modeled in the reach-through case. The breakdown voltage was derived by the impact ionization integral employing the effective impact ionization coefficient and an accurate approximation. Our model shows that the breakdown voltage of wurtzite GaN rectifier was larger than those of zinc-blende GaN rectifier and SiC rectifiers including 4H-SiC and 6H-SiC in the condition that both the thickness and doping concentration of epitaxial layer are identical.

Steady-state and transient electron transport within bulk wurtzite zinc oxide and the resultant electron device performance

2013 ◽  
Vol 1577 ◽  
Author(s):  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Indium Nitride ◽  
Device Performance ◽  
Electron Drift ◽  
Electron Device ◽  
Velocity Enhancement

ABSTRACTWe review some recent results related to the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. We employ three-valley Monte Carlo simulations of the electron transport within this material for the purposes of this analysis. Using these results, we devise a means of rendering transparent the electron drift velocity enhancement offered by transient electron transport over steady-state electron transport. A comparison, with results corresponding to gallium nitride, indium nitride, and aluminum nitride, is provided. The device implications of these results are then presented.

A steady-state and transient analysis of the electron transport that occurs within bulk wurtzite zinc-magnesium-oxide alloys subjected to high-fields

MRS Advances ◽  
2018 ◽  
Vol 3 (59) ◽  
pp. 3439-3444 ◽  
Author(s):  
Poppy Siddiqua ◽  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Steady State ◽  
Electron Transport ◽  
Magnesium Oxide ◽  
Transient Analysis ◽  
Alloy System ◽  
Magnesium Content ◽  
High Fields ◽  
Zinc Magnesium Oxide ◽  
The Impact ◽  
Bulk Alloys

ABSTRACTWe present some recently acquired results corresponding to the nature of the electron transport that occurs within bulk alloys of zinc-magnesium-oxide. These results are obtained using three-valley ensemble semi-classical Monte Carlo electron transport simulations. The impact that the magnesium content plays in shaping the form of the electron transport related characteristics associated with this alloy system is explored. Both steady-state and transient electron transport results are examined. The device implications of these results are then commented upon.

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