How changes in the crystal temperature and the doping concentration impact upon bulk wurtzite zinc oxide’s electron transport response

MRS Advances ◽  
2019 ◽  
Vol 4 (50) ◽  
pp. 2673-2678
Author(s):  
Poppy Siddiqua ◽  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Drift Velocity ◽  
Doping Concentration ◽  
Electron Drift ◽  
Crystal Temperature ◽  
Transient Transport ◽  
Transport Response ◽  
The Impact

ABSTRACTThe role that changes in the crystal temperature and the doping concentration play in shaping the character of the steady-state and transient transport response of electrons within bulk wurtzite zinc oxide will be examined. Monte Carlo electron transport simulations are drawn upon for the purposes of this analysis. We find that both the crystal temperature and the doping concentration greatly influence the character of the steady-state and transient electron transport response. In particular, for the case of steady-state electron transport, the peak drift velocity decreases by 30% as the crystal temperature is increased from 100 to 700 K, this decrease in velocity being only 20% as the doping concentration is increased from 1015 to 1019 cm-3. The impact on the transient electron drift velocity is not as acute.

Steady-state and transient electron transport within bulk wurtzite zinc oxide and the resultant electron device performance

2013 ◽  
Vol 1577 ◽  
Author(s):  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Indium Nitride ◽  
Device Performance ◽  
Electron Drift ◽  
Electron Device ◽  
Velocity Enhancement

ABSTRACTWe review some recent results related to the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. We employ three-valley Monte Carlo simulations of the electron transport within this material for the purposes of this analysis. Using these results, we devise a means of rendering transparent the electron drift velocity enhancement offered by transient electron transport over steady-state electron transport. A comparison, with results corresponding to gallium nitride, indium nitride, and aluminum nitride, is provided. The device implications of these results are then presented.

The electron transport that occurs within wurtzite zinc oxide and the application of stress

MRS Advances ◽  
2017 ◽  
Vol 2 (48) ◽  
pp. 2627-2632 ◽  
Author(s):  
Poppy Siddiqua ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Electron Transport ◽  
Velocity Field ◽  
Monte Carlo Simulations ◽  
Significant Role ◽  
Energy Gap ◽  
Device Application ◽  
The Impact

ABSTRACTWe examine how stress has the potential to shape the character of the electron transport that occurs within ZnO. In order to narrow the scope of this analysis, we focus on a determination of the velocity-field characteristics associated with bulk wurtzite ZnO. Monte Carlo simulations of the electron transport are pursued for the purposes of this analysis. Rather than focusing on the impact of stress in of itself, instead we focus on the changes that occur to the energy gap through the application of stress, i.e., energy gap variations provide a proxy for the amount of stress. Our results demonstrate that stress plays a significant role in shaping the form of the velocity-field characteristics associated with ZnO. This dependence could potentially be exploited for device application purposes.

A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs

1988 ◽  
Vol 53 (22) ◽  
pp. 2205-2207 ◽  
Author(s):  
K. Sadra ◽  
C. M. Maziar ◽  
B. G. Streetman ◽  
D. S. Tang
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Study ◽  
Electron Hole

scholarly journals Townsend Discharges in Transverse Magnetic Fields

1983 ◽  
Vol 36 (6) ◽  
pp. 859 ◽  
Author(s):  
HA Blevin ◽  
MJ Brennan
Keyword(s):  
Magnetic Field ◽  
Steady State ◽  
Magnetic Fields ◽  
Drift Velocity ◽  
Transverse Magnetic Field ◽  
Electron Concentration ◽  
Diffusion Coefficients ◽  
Concentration Distribution ◽  
Transverse Magnetic ◽  
Electron Drift

Expressions are derived for the electron concentration in Townsend discharges in the presence of a transverse magnetic field for both steady state and pulsed conditions. These results indicate that the two components of the electron drift velocity and the four diffusion coefficients required to describe the concentration distribution can be determined by observation of photons emitted from the discharge.

Effect of a transverse applied electric field on electron drift velocity in a GaAs quantum wire: A Monte Carlo simulation

2010 ◽  
Vol 39 (6) ◽  
pp. 411-417 ◽  
Author(s):  
A. V. Borzdov ◽  
D. V. Pozdnyakov ◽  
V. M. Borzdov ◽  
A. A. Orlikovsky ◽  
V. V. V’yurkov
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electric Field ◽  
Drift Velocity ◽  
Quantum Wire ◽  
Applied Electric Field ◽  
Electron Drift Velocity ◽  
Electron Drift
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