High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe2/MoS2

2016 ◽  
Vol 108 (19) ◽  
pp. 191606 ◽  
Author(s):  
Horacio Coy Diaz ◽  
Yujing Ma ◽  
Redhouane Chaghi ◽  
Matthias Batzill
Keyword(s):  
Molecular Beam Epitaxy ◽  
Grain Boundaries ◽  
Molecular Beam ◽  
Van Der Waals ◽  
High Density ◽  
Van Der Waals Heterostructure

scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

High-density quantum wires naturally formed on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 814-818 ◽  
Author(s):  
M. Higashiwaki ◽  
M. Yamamoto ◽  
S. Shimomura ◽  
A. Adachi ◽  
S. Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Wires ◽  
High Density ◽  
Gaas Substrates

Effects of Hydrogen on Nucleation of Islands During Si(001) Mbe Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
Kazuki Mizushima ◽  
Pavel Šmilauer ◽  
Dimitri D. Vvedensky
Keyword(s):  
Monte Carlo ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
High Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Temperature Range ◽  
Kinetic Monte Carlo Simulations

AbstractKinetic Monte Carlo simulations with two species (Si and H) have been performed to identify the mechanism behind the H-induced creation of a strongly temperature-dependent high density of Si islands in the temperature range of 300–550 K during molecular-beam epitaxy on Si(001) surface. A model is proposed to explain this effect as a result of an activated exchange between H and Si at Si island edges.

scholarly journals Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 3571-3577 ◽  
Author(s):  
Xiang Yuan ◽  
Lei Tang ◽  
Shanshan Liu ◽  
Peng Wang ◽  
Zhigang Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

Nanorods as a precursor for high quality GaN layers

2008 ◽  
Vol 1144 ◽  
Author(s):  
David Cherns ◽  
Ian Griffiths ◽  
Somboon Khongphetsak ◽  
Sergei Novikov ◽  
Nicola Farley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Grain Boundaries ◽  
Molecular Beam ◽  
Threading Dislocations ◽  
High Quality ◽  
Threading Defects ◽  
Nanorod Growth

ABSTRACTThe density of threading dislocations in GaN/(0001)sapphire films grown by molecular beam epitaxy can be reduced to about 108 cm−2 by growing an intermediate nanorod layer. This paper examines the growth of the nanorods and proposes that threading defects in the overlayer arise either through grain boundaries formed when nanorods coalesce, or through the propagation of dislocation dipoles seen during nanorod growth. Results showing that the latter often terminate or develop into voids during growth are discussed.

Development of High-Density Nitrogen Radical Source for Low Mosaicity and High Rate Growth of InGaN Films in Molecular Beam Epitaxy

2013 ◽  
Vol 52 (2R) ◽  
pp. 021001 ◽  
Author(s):  
Shang Chen ◽  
Yohjiro Kawai ◽  
Hiroki Kondo ◽  
Kenji Ishikawa ◽  
Keigo Takeda ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Density ◽  
High Rate ◽  
Nitrogen Radical
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