scholarly journals Nano-crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065216 ◽  
Author(s):  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
Ryoichi Ishihara ◽  
Johan van der Cingel ◽  
Mohammad R. T. Mofrad ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing

On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing

1990 ◽  
Vol 29 (Part 2, No. 10) ◽  
pp. L1775-L1777 ◽  
Author(s):  
Kazuhiro Shimizu ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
On Chip ◽  
Bottom Gate

Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors

1994 ◽  
Vol 33 (Part 1, No. 4A) ◽  
pp. 2092-2099 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Akio Mimura ◽  
Nobutake Konishi
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Doping ◽  
Si Thin Film

Poly-Silicon Thin-Film Transistors with Uniform Performance Fabricated by Excimer Laser Annealing

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 474-481 ◽  
Author(s):  
Ichirou Asai ◽  
Noriji Kato ◽  
Mario Fuse ◽  
Toshihisa Hamano
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Poly Silicon

Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors

2009 ◽  
Vol 48 (8) ◽  
pp. 081608 ◽  
Author(s):  
Mitsuru Nakata ◽  
Kazushige Takechi ◽  
Toshimasa Eguchi ◽  
Eisuke Tokumitsu ◽  
Hirotaka Yamaguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Excimer Laser Annealing

Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5657-5662 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Tomoyuki Nohda ◽  
Yoichirou Aya ◽  
Takashi Kuwahara ◽  
Kenichiro Wakisaka ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Growth ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Si Films ◽  
Comprehensive Study

Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing

2013 ◽  
Vol 811 ◽  
pp. 177-180
Author(s):  
Jyh Liang Wang ◽  
Chun Chien Tsai ◽  
Chuan Chou Hwang ◽  
Tsang Yen Hsieh
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Annealing ◽  
Electrical Characteristics ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
Bottom Gate

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.

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