scholarly journals Modeling of the refractive index and composition of luminescent nanometric chlorinated-silicon nitride films with embedded Si-quantum dots

2016 ◽  
Vol 120 (14) ◽  
pp. 145305 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
R. Serna ◽  
F. Cabello ◽  
E. Haro-Poniatowski ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Refractive Index ◽  
Silicon Nitride ◽  
Silicon Nitride Films ◽  
Si Quantum Dots

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Vacuum ◽  
2015 ◽  
Vol 121 ◽  
pp. 147-151 ◽  
Author(s):  
Wugang Liao ◽  
Xiangbin Zeng ◽  
Xixing Wen ◽  
Xiaoxiao Chen ◽  
Wenzhao Wang
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Silicon Quantum Dots ◽  
Silicon Nitride Films

Substrate Temperature Effects on Properties of Silicon Nitride Films Deposited by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
K. S. Grabowski ◽  
W. D. Coleman
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Flux Ratio ◽  
Film Structure ◽  
Atom Fraction ◽  
Silicon Nitride Films

AbstractSilicon nitride films (Si1−x,.Nx) have been deposited on silicon by simultaneous evaporation of silicon and bombardment of nitrogen ions. Films approximately 1 μm thick were deposited in an ambient nitrogen pressure of 50 μTorr. The substrate temperature (TSUB) ranged from nominally room temperature to 950° C for films with X between 0 and 0.6. Nitrogen atom fraction, X, was measured with Rutherford backscattering spectrometry (RBS). Refractive index was measured with near-IR reflection spectroscopy. Differences in film structure were measured by FT1R on the Si-N bond bending absorption mode, and by x-ray diffraction (XRD). X was found to depend upon the incident flux ratio of energetic nitrogen atoms to vapor silicon, and upon TSUB. Refractive index depends upon X and TSUB. XRD found evidence of the presence of amorphous structure, poly-crystalline silicon and (101) oriented β-Si3N4 depending on X and TSUB. The Si-N absorption signal increases with X and shows some structure at high TSUB.

Effect of thickness on the photoluminescence of silicon quantum dots embedded in silicon nitride films

2013 ◽  
Vol 113 (23) ◽  
pp. 233102 ◽  
Author(s):  
A. Rodriguez-Gómez ◽  
A. García-Valenzuela ◽  
E. Haro-Poniatowski ◽  
J. C. Alonso-Huitrón
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Silicon Quantum Dots ◽  
Silicon Nitride Films

Refractive-index dispersion of phosphosilicate glass, thermal oxide, and silicon nitride films on silicon

1988 ◽  
Vol 27 (19) ◽  
pp. 4104 ◽  
Author(s):  
H. J. Lee ◽  
C. H. Henry ◽  
K. J. Orlowsky ◽  
R. F. Kazarinov ◽  
T. Y. Kometani
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Refractive Index Dispersion ◽  
Silicon Nitride Films ◽  
Thermal Oxide ◽  
Phosphosilicate Glass
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