Refractive-index dispersion of phosphosilicate glass, thermal oxide, and silicon nitride films on silicon

1988 ◽  
Vol 27 (19) ◽  
pp. 4104 ◽  
Author(s):  
H. J. Lee ◽  
C. H. Henry ◽  
K. J. Orlowsky ◽  
R. F. Kazarinov ◽  
T. Y. Kometani
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Refractive Index Dispersion ◽  
Silicon Nitride Films ◽  
Thermal Oxide ◽  
Phosphosilicate Glass

scholarly journals Modeling of the refractive index and composition of luminescent nanometric chlorinated-silicon nitride films with embedded Si-quantum dots

2016 ◽  
Vol 120 (14) ◽  
pp. 145305 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
R. Serna ◽  
F. Cabello ◽  
E. Haro-Poniatowski ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Refractive Index ◽  
Silicon Nitride ◽  
Silicon Nitride Films ◽  
Si Quantum Dots

Substrate Temperature Effects on Properties of Silicon Nitride Films Deposited by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
K. S. Grabowski ◽  
W. D. Coleman
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Flux Ratio ◽  
Film Structure ◽  
Atom Fraction ◽  
Silicon Nitride Films

AbstractSilicon nitride films (Si1−x,.Nx) have been deposited on silicon by simultaneous evaporation of silicon and bombardment of nitrogen ions. Films approximately 1 μm thick were deposited in an ambient nitrogen pressure of 50 μTorr. The substrate temperature (TSUB) ranged from nominally room temperature to 950° C for films with X between 0 and 0.6. Nitrogen atom fraction, X, was measured with Rutherford backscattering spectrometry (RBS). Refractive index was measured with near-IR reflection spectroscopy. Differences in film structure were measured by FT1R on the Si-N bond bending absorption mode, and by x-ray diffraction (XRD). X was found to depend upon the incident flux ratio of energetic nitrogen atoms to vapor silicon, and upon TSUB. Refractive index depends upon X and TSUB. XRD found evidence of the presence of amorphous structure, poly-crystalline silicon and (101) oriented β-Si3N4 depending on X and TSUB. The Si-N absorption signal increases with X and shows some structure at high TSUB.

Deposition of silicon nitride by glow-discharge decomposition of silane–nitrogen mixtures in a saddle-field plasma

1991 ◽  
Vol 69 (3-4) ◽  
pp. 185-191
Author(s):  
C. I. Ukah ◽  
R. Meh ◽  
S. Zukotynski ◽  
R. V. Kruzelecky ◽  
A. Chakrabarti
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Glow Discharge ◽  
Hydrogen Content ◽  
Far Infrared ◽  
Auger Analysis ◽  
Silicon Nitride Films ◽  
Thickness Variations ◽  
Photoluminescence Studies ◽  
Absorption Measurements

High-quality silicon nitride films have been deposited onto a variety of substrates including c-Si, GaAs, and InP at temperatures in the range 50–350 °C by the dc glow-discharge decomposition of silane–nitrogen mixtures in a saddle-field cavity. The effect of the N2–SiH4 flow ratio [Formula: see text] and the effect of a dc bias Vb applied to the substrate holder on the properties of the resulting films were systematically investigated. The N/Si ratio in the resulting films, as determined by Auger analysis, could be varied from 0 to 1.8 by adjusting [Formula: see text], with [Formula: see text] yielding stoichiometric silicon nitride. The total hydrogen content, as determined by 15N profiling, decreased linearly with [Formula: see text]. Far infrared absorption measurements indicated that hydrogen was incorporated mainly into Si–H sites at lower N2–SiH4 flow ratios in the range 1–2; higher N2–SiH4 flow ratios of 5–15 resulted in approximately equal concentrations of Si–H and N–H sites with a total bonded hydrogen content of about 12 at.% for films deposited at 250 °C. Ellipsometry measurements indicated that a refractive index as low as 1.82 at 632.8 nm was achieved. Refractive index and thickness variations of less than 5% were observed in films deposited on 4 in (1 in = 2.54 cm) diameter c-Si wafers. Scanning electron microscopy and photoluminescence studies of the thermal stability of SiNH films deposited onto semiinsulating GaAs indicated improved annealing behaviour with positive substrate bias.

Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperature

2010 ◽  
Vol 654-656 ◽  
pp. 1712-1715
Author(s):  
Ai Min Wu ◽  
Hong Yun Yue ◽  
X.Y. Zhang ◽  
Fu Wen Qin ◽  
T.J. Li ◽  
...  
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Power ◽  
Silicon Nitride Film ◽  
High Deposition Rate ◽  
Deposition Parameter ◽  
Silicon Nitride Films ◽  
Deposition Parameters

The silicon nitride films have been deposited by Electron Cyclotron Resonance-plasma enhanced chemical vapor deposition (ECR-PECVD) method at low temperature, and the pure nitrogen is introduced into the ECR chamber as the plasma gas, the silane(Ar diluted, Ar:SiH4=19:1) is used as precursor gas. The optimum deposition parameters of SiN films for photovoltaic application as an efficient antireflection coating(ARC) have been investigated. The actual composition of the films will be varied with the deposition conditions, such as gas flow rate ratio(N2/SiH4), substrate temperature, and microwave power. The effect of deposition parameters on the optical performance of SiN films was determined by Ellipsometry. The Si-N and N-H stretching characteristic peaks of SiN films have been observed by FTIR spectroscopy. Results shown that uniform silicon nitride films with low hydrogen content can be deposited at high deposition rate(10.7nm/min), and the refractive index increased with the increasing of substrate temperature and microwave power. The film shows good optical properties (refractive index is 2.0 or so) and satisfied surface quality (average roughness is 1.45nm) when the deposition parameter is 350oC and microwave power is 650W.

Should the refractive index at 633 nm be used to characterize silicon nitride films?

2016 ◽  
Author(s):  
Ziv Hameiri ◽  
Nino Borojevic ◽  
Ly Mai ◽  
Naomi Nandakumar ◽  
Kyung Kim ◽  
...  
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Silicon Nitride Films

Comparative Study of the Optical and Vibrational Properties of a-SiNx:H Films Prepared from SiH4-N2 and SiH4-NH3 Gas Mixtures by rf Plasma

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Campmany ◽  
E. Bertran ◽  
J.L. Andújar ◽  
A. Canillas ◽  
J. M. López-Villegas ◽  
...  
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Growth Models ◽  
Nitrogen Concentration ◽  
Gas Mixtures ◽  
Rf Plasma ◽  
Vibrational Properties ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Wide Range

ABSTRACTThe properties of amorphous silicon nitride films (a-SiNx:H) prepared by PECVD from SiH4-NH3 and SiH4-N2 gas mixtures have been determined by spectroscopie ellipsometry and FTIR spectroscopy as a function of the nitrogen concentration measured by XPS. The films are transparent for silane ratios [SiH4]/([SiH4] + [NH3]) < 20% and [SiH4]/([SiH4] + [N,]) < 1.5%. The refractive index shows a wide range of progressive variation from 3.2 for high silane concentrations to 1.8 for low silane concentrations. The hydrogen content of the low-absorbing films has much lower values for those obtained by SiH4 + N2 plasma than for those obtained by SiH4 + NH3 plasma. The results are discussed in terms of growth models of PECVD a-SiNx:H films from SiH4-NH3 and SiH4-N2 mixtures.

Sign in / Sign up

Export Citation Format

Share Document