All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

2017 ◽  
Vol 110 (10) ◽  
pp. 102104 ◽  
Author(s):  
S. Neugebauer ◽  
M. P. Hoffmann ◽  
H. Witte ◽  
J. Bläsing ◽  
A. Dadgar ◽  
...  
Keyword(s):  
Blue Light ◽  
Vapor Phase ◽  
Tunnel Junction ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Metalorganic Chemical

Vertical-Type Blue Light Emitting Diode by Mixed-Source Hydride Vapor Phase Epitaxy Method

2017 ◽  
Vol 215 (10) ◽  
pp. 1700491 ◽  
Author(s):  
Injun Jeon ◽  
Sung Geun Bae ◽  
Hunsoo Jeon ◽  
Kyoung Hwa Kim ◽  
Min Yang ◽  
...  
Keyword(s):  
Blue Light ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting

Development of a Blue Light-Emitting Diode by Using a Mixed-Source Hydride-Vapor-Phase Epitaxy Method

2017 ◽  
Vol 67 (4) ◽  
pp. 444-450
Author(s):  
Hunsoo JEON ◽  
Injun JEON ◽  
Sung Geun BAE ◽  
Sam Nyung YI ◽  
Min YANG ◽  
...  
Keyword(s):  
Blue Light ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting

Dynamical X-ray Rocking curve Simulations of InGaAsP/InP Double Heterostruciures using Abeles' Matrix Method

1986 ◽  
Vol 90 ◽  
Author(s):  
A. T. Macrander ◽  
B. M. Glasgow ◽  
E. R. Minami ◽  
R. F. Karlicek ◽  
D. L. Mitcham ◽  
...  
Keyword(s):  
Active Layer ◽  
Vapor Phase ◽  
Matrix Method ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray

ABSTRACTSimulated rocking curves for a light-emitting diode structure are presented. Results for a structure containing uniform layers are compared to rocking curve data for a wafer grown by vapor phase epitaxy (VPE), and we conclude from the comparison that the VPE wafer closely approached the hypothetical ideal assumed in the simulations. Simulations illustrating difficulties in analyses and the effects of a graded active layer are also presented.

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

2000 ◽  
Vol 39 (Part 2, No. 11B) ◽  
pp. L1183-L1185 ◽  
Author(s):  
Armin Dadgar ◽  
Jürgen Bläsing ◽  
Annette Diez ◽  
Assadullah Alam ◽  
Michael Heuken ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Chemical Vapor ◽  
Vapor Phase Epitaxy ◽  
Gan On Si ◽  
Metalorganic Chemical
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