scholarly journals W/Cu thin film infrared reflector for TiNxOy based selective solar absorber with high thermal stability

2017 ◽  
Vol 121 (20) ◽  
pp. 203101 ◽  
Author(s):  
J. Zhang ◽  
T. P. Chen ◽  
Y. C. Liu ◽  
Z. Liu ◽  
H. Y. Yang
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
High Thermal Stability ◽  
Solar Absorber ◽  
Cu Thin Film

scholarly journals Investigation of reactively sputtered TaN thin-film resistors for microwave photonic applications

2021 ◽  
pp. 93-98
Author(s):  
Evgenii Erofeev ◽  
Egor Polyntsev ◽  
Sergei Ishutkin
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Electrical Resistance ◽  
High Thermal Stability ◽  
Tantalum Nitride ◽  
Reactive Magnetron ◽  
Microwave Photonic ◽  
Thin Film Resistors ◽  
Thermal Stability Of

Electrophysical characteristics and their thermal stability of thin-film resistors based on tantalum nitride (TaN) obtained by reactive magnetron sputtering were investigated. The optimal modes of the magnetron sputtering process are determined, ensuring the Ta2N phase film composition with the value of the specific electrical resistance of 250 μm cm and high thermal stability of the parameters. On the basis of the investigations carried out, thin-film matching resistors were manufactured for use as part of an electro-optical InP-based MZ modulator

scholarly journals High-performance La-doped BCZT thin film capacitors on LaNiO3/Pt composite bottom electrodes with ultra-high efficiency and high thermal stability

2019 ◽  
Vol 45 (9) ◽  
pp. 11749-11755 ◽  
Author(s):  
Shangkai He ◽  
Biaolin Peng ◽  
Glenn J.T. Leighton ◽  
Christopher Shaw ◽  
Ningzhang Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
High Performance ◽  
High Efficiency ◽  
High Thermal Stability ◽  
Thin Film Capacitors ◽  
La Doped

Design guideline of a thin film SOI power MOSFET for high thermal stability

2012 ◽  
Vol 52 (9-10) ◽  
pp. 2380-2384 ◽  
Author(s):  
Yuka Morisawa ◽  
Takuya Kodama ◽  
Satoshi Matsumoto
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
High Thermal Stability ◽  
Design Guideline ◽  
Power Mosfet

scholarly journals Manufacturing ITO/SnO2 doubled layer for anode electrode of dye-sensitized solar cells (DSSC)

2013 ◽  
Vol 16 (4) ◽  
pp. 13-19
Author(s):  
Trung Kien Vo ◽  
Thu Thi Thanh Vu
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Transparent Conducting Oxide ◽  
Dye Sensitized Solar Cells ◽  
Optical Transmittance ◽  
High Thermal Stability ◽  
Sno2 Thin Film ◽  
Nanocrystalline Tio2 ◽  
Dye Sensitized ◽  
Anode Electrode

Anode electrodes of dye-sensitized solar cell(DSSC) are transparent conducting oxide films (TCO) which being high thermal stability to be coated with nanocrystalline TiO2 above sintered at 450–500oC. One of the TCO films is ITO thin film having the advantage of high transmittance and good electrical conductivity, but not high thermal stability. In this work, SnO2 thin film was coated on the ITO film by DC magnetron sputtering and their thermal durable properties were studied. Our results showed that ITO/SnO2 doubled layer on glass with 190 nm SnO2 thickness could achieve optical transmittance in visible light range above 80%, the sheet resistance about 13 Ω/square, small particle size on surface, being specially stable at 4500C. So, this conducting glasses coated TiO2 layer was suitable to be used as anode electrodes for DSSC.

Zr–Cu thin film metallic glasses: An assessment of the thermal stability and phases’ transformation mechanisms

2015 ◽  
Vol 619 ◽  
pp. 284-292 ◽  
Author(s):  
M. Apreutesei ◽  
P. Steyer ◽  
A. Billard ◽  
L. Joly-Pottuz ◽  
C. Esnouf
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Metallic Glasses ◽  
Transformation Mechanisms ◽  
Cu Thin Film

Thermal Stability and Electrical Properties of Ag(Al) Metallization

2004 ◽  
Vol 812 ◽  
Author(s):  
Hyunchul C. Kim ◽  
N. David Theodore ◽  
James W. Mayer ◽  
Terry L. Alford
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
Electrical Resistivity ◽  
High Speed ◽  
Rutherford Backscattering Spectrometry ◽  
Al Alloy ◽  
Good Thermal Stability ◽  
Al Thin Film ◽  
Cu Thin Film

AbstractThe thermal stability and electrical resistivity of Ag(Al) alloy thin films on SiO2 are investigated and compared to pure Ag thin films by performing various analyses: Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), transmission electron microscopy (TEM), and four-point probe. The susceptibility to agglomeration of Ag on SiO2 layer is a drawback of Ag metallization. Ag(Al) thin films show good thermal stability on SiO2 layer without any diffusion barrier. The films are stable up to 600 °C for 1 hour in vacuum. Electrical resistivity of as-deposited Ag (5 at % Al) thin film is slightly higher than that of pure Ag thin film. However, the resistivity of Ag(Al) samples annealed at high temperatures (up to 600 °C for 1 hour in vacuum) remains constant due to the improvement of thermal stability (large reduction of agglomeration). This finding can impact metallization for thin film transistors (TFT) for displays, including flexible displays, and high-speed electronics due to lower resistivity value compared to Cu thin film.

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