Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

2017 ◽  
Vol 111 (21) ◽  
pp. 212103 ◽  
Author(s):  
Szuheng Ho ◽  
Hyeonggeun Yu ◽  
Franky So
Keyword(s):  
Zinc Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Schottky Diodes ◽  
Indium Gallium Zinc Oxide ◽  
Oxygen Doping ◽  
Indium Gallium

Indium–Gallium–Zinc Oxide Schottky Diodes Operating across the Glass Transition of Stimuli‐Responsive Polymers

2020 ◽  
Vol 6 (4) ◽  
pp. 1901210 ◽  
Author(s):  
Edgar Guerrero ◽  
Alexander Polednik ◽  
Melanie Ecker ◽  
Alexandra Joshi‐Imre ◽  
Wooyeol Choi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Glass Transition ◽  
Schottky Diodes ◽  
Indium Gallium Zinc Oxide ◽  
Stimuli Responsive ◽  
Stimuli Responsive Polymers ◽  
Responsive Polymers ◽  
Indium Gallium

scholarly journals Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

2015 ◽  
Vol 107 (9) ◽  
pp. 093505 ◽  
Author(s):  
Jiawei Zhang ◽  
Linqing Zhang ◽  
Xiaochen Ma ◽  
Joshua Wilson ◽  
Jidong Jin ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Schottky Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Indium Gallium Zinc Oxide ◽  
Low Frequency Noise ◽  
Indium Gallium

scholarly journals Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel

Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 53
Author(s):  
Hoonhee Han ◽  
Seokmin Jang ◽  
Duho Kim ◽  
Taeheun Kim ◽  
Hyeoncheol Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Indium Tin Oxide ◽  
Flash Memory ◽  
Metal Layer ◽  
Thin Film Transistor ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium ◽  
Memory Characteristics

The memory characteristics of a flash memory device using c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The CAAC-IGZO thin films can replace the current poly-silicon channel, which has reduced mobility because of grain-induced degradation. The CAAC-IGZO thin films were achieved using a tantalum catalyst layer with annealing. A thin film transistor (TFT) with SiO2/Si3N4/Al2O3 and CAAC-IGZO thin films, where Al2O3 was used for the tunneling layer, was evaluated for a flash memory application and compared with a device using an amorphous IGZO (a-IGZO) channel. A source and drain using indium-tin oxide and aluminum were also evaluated for TFT flash memory devices with crystallized and amorphous channel materials. Compared with the a-IGZO device, higher on-current (Ion), improved field effect carrier mobility (μFE), a lower body trap (Nss), a wider memory window (ΔVth), and better retention and endurance characteristics were attained using the CAAC-IGZO device.

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

2021 ◽  
Vol 42 (3) ◽  
pp. 031101
Author(s):  
Ying Zhu ◽  
Yongli He ◽  
Shanshan Jiang ◽  
Li Zhu ◽  
Chunsheng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Fabrication of indium gallium zinc oxide phototransistors via oxide-mesh insertion for visible light detection

2020 ◽  
Vol 8 (1) ◽  
pp. 165-172 ◽  
Author(s):  
Dongwoo Kim ◽  
Yeong-gyu Kim ◽  
Byung Ha Kang ◽  
Jin Hyeok Lee ◽  
Jusung Chung ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Visible Light ◽  
Oxygen Vacancies ◽  
Indium Gallium Zinc Oxide ◽  
Light Detection ◽  
Indium Gallium

Visible light detection of oxide phototransistors via insertion of an oxide-mesh inside the channel creating oxygen vacancies that increase subgap states.

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