scholarly journals Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

2018 ◽  
Vol 124 (6) ◽  
pp. 065301 ◽  
Author(s):  
G. Naresh-Kumar ◽  
David Thomson ◽  
Y. Zhang ◽  
J. Bai ◽  
L. Jiu ◽  
...  
2011 ◽  
Vol 44 (4) ◽  
pp. 779-787 ◽  
Author(s):  
Stefan Martin ◽  
Christiane Ullrich ◽  
Daniel Šimek ◽  
Ulrich Martin ◽  
David Rafaja

Plastic deformation of highly alloyed austenitic transformation-induced plasticity (TRIP) steels with low stacking fault energy leads typically to the formation of ∊-martensite within the original austenite. The ∊-martensite is often described as a phase having a hexagonal close-packed crystal structure. In this contribution, an alternative structure model is presented that describes ∊-martensite embedded in the austenitic matrixviaclustering of stacking faults in austenite. The applicability of the model was tested on experimental X-ray diffraction data measured on a CrMnNi TRIP steel after 15% compression. The model of clustered stacking faults was implemented in theDIFFaXroutine; the faulted austenite and ∊-martensite were represented by different stacking fault arrangements. The probabilities of the respective stacking fault arrangements were obtained from fitting the simulated X-ray diffraction patterns to the experimental data. The reliability of the model was proven by scanning and transmission electron microscopy. For visualization of the clusters of stacking faults, the scanning electron microscopy employed electron channelling contrast imaging and electron backscatter diffraction.


2011 ◽  
Vol 64 (6) ◽  
pp. 513-516 ◽  
Author(s):  
A. Weidner ◽  
S. Martin ◽  
V. Klemm ◽  
U. Martin ◽  
H. Biermann

Author(s):  
J.T. Czernuszka ◽  
N.J. Long ◽  
P.B. Hirsch

In the 1970s there was considerable interest in the development of the electron channelling contrast imaging (ECCI) technique for imaging near surface defects in bulk (electron opaque) specimens. The predictions of the theories were realised experimentally by Morin et al., who used a field emission gun (FEG) operating at 40-50kV and an energy filter such that only electrons which had lost no more than a few 100V were detected. This paper presents the results of a set of preliminary experiments which show that an energy filter system is unneccessary to image and characterise the Burgers vectors of dislocations in bulk specimens. The examples in the paper indicatethe general versatility of the technique.A VG HB501 STEM with a FEG was operated at 100kV. A single tilt cartridge was used in the reflection position of the microscope. A retractable back-scattered electron detector was fitted into the secondary electron port and positioned to within a few millimetres of the specimen. The image was acquired using a Synoptics Synergy framestore and digital scan generator and subsequently processed using Semper 6. The beam divergence with the specimen in this position was 2.5 mrads with a spot size of approximately 4nm. Electron channelling patterns were used to orientate the sample.


2012 ◽  
Vol 717-720 ◽  
pp. 387-390 ◽  
Author(s):  
Robert E. Stahlbush ◽  
Qing Chun Jon Zhang ◽  
Anant K. Agarwal ◽  
Nadeemullah A. Mahadik

The effects of Shockley stacking faults (SSFs) that originate from half loop arrays (HLAs) on the forward voltage and reverse leakage were measured in 10 kV 4H-SiC PiN diodes. The presence of HLAs and basal plane dislocations in each diode in a wafer was determined by ultraviolet photoluminescence imaging of the wafer before device fabrication. The SSFs were expanded by electrical stressing under forward bias of 30 A/cm2, and contracted by annealing at 550 °C. The electrical stress increased both the forward voltage and reverse leakage. Annealing returned the forward voltage and reverse leakage to nearly their original behavior. The details of SSF expansion and contraction from a HLA and the effects on the electrical behavior of the PiN diodes are discussed.


2018 ◽  
Vol 924 ◽  
pp. 147-150
Author(s):  
Jörg Pezoldt ◽  
Andrei Alexandrovich Kalnin

A model based on the generation and recombination of defect was developed to describe the stability of stacking faults and basal plane dislocation loops in crystals with layered polytype structures. The stability of the defects configuration was analysed for stacking faults surrounded by Shockley and Frank partial dislocation as well as Shockley dislocation dipoles with long range elastic fields. This approach allows the qualitative prediction of defect subsystems in polytype structure in external fields.


2018 ◽  
Vol 57 (4S) ◽  
pp. 04FR07 ◽  
Author(s):  
Shohei Hayashi ◽  
Tamotsu Yamashita ◽  
Junji Senzaki ◽  
Masaki Miyazato ◽  
Mina Ryo ◽  
...  

Author(s):  
Anant Agarwal ◽  
Sumi Krishnaswami ◽  
James Richmond ◽  
Craig Capell ◽  
Sei Hyung Ryu ◽  
...  

2014 ◽  
Vol 439 ◽  
pp. 50-53 ◽  
Author(s):  
V. Khranovskyy ◽  
M.O. Eriksson ◽  
G.Z. Radnoczi ◽  
A. Khalid ◽  
H. Zhang ◽  
...  

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 386
Author(s):  
Takeo Hondoh

Dislocations in ice behave very differently from those in other materials due to the very low energies of stacking faults in the ice basal plane. As a result, the dislocations dissociate on the basal plane, from a perfect dislocation into two partial dislocations with equilibrium width we ranging from 20 to 500 nm, but what is the timescale to reach this dissociated state? Using physical models, we estimate this timescale by calculating two time-constants: the dissociation-completing time td and the dissociation-beginning time tb. These time constants are calculated for two Burgers vectors as a function of temperature. For perfect dislocations with Burgers vector <c + a>, td is more than one month even at the melting temperature TM, and it exceeds 103 years below −50 ℃, meaning that the dissociation cannot be completed during deformation over laboratory timescales. However, in this case the beginning time tb is less than one second at TM, and it is within several tens of minutes above −50 ℃. These dislocations can glide on non-basal planes until they turn to the dissociated state during deformation, finally resulting in sessile extended dislocations of various widths approaching to the equilibrium value we. In contrast, for perfect dislocations with Burgers vector <a>, td is less than one second above −50 ℃, resulting in glissile extended dislocations with the equilibrium width we on the basal plane. This width is sensitive to the shear stress τ exerted normal to the dislocation line, leading to extension of the intervening stacking fault across the entire crystal grain under commonly accessible stresses. Also, due to the widely dissociated state, dislocations <a> cannot cross-slip to non-basal planes. Such behavior of extended dislocations in ice are notable when compared to those of other materials.


Sign in / Sign up

Export Citation Format

Share Document