scholarly journals Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO

2020 ◽  
Vol 127 (8) ◽  
pp. 085705 ◽  
Author(s):  
Jedsada Manyam ◽  
Cuong Ton-That ◽  
Matthew R. Phillips
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.


1995 ◽  
Vol 204 (1) ◽  
pp. 74-78 ◽  
Author(s):  
N.A. Tulina ◽  
G.A. Emelchenco ◽  
A.B. Kulakov

2021 ◽  
Vol 2090 (1) ◽  
pp. 012057
Author(s):  
L.G. Karyev ◽  
V.A. Fedorov ◽  
A.D. Berezner

Abstract A theoretical study of the behaviour of atomic planes in an elastic single-crystal rod under the action of volumetric forces such as the inertial force and the force of gravity has been carried out. The regularity of the linear distribution density of atomic planes in a single-crystal rod has been established in frames of continuous and discrete approaches. The obtained distribution function is of independent interest, and it can be used, for example, in studying the behaviour of a metal rod under conditions of an external induced electric field.


2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.


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