Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films

The optic axis of an electron microscope objective lens is usually assumed to be straight and co-linear with the mechanical center. No reason exists to assume such perfection and, indeed, simple reasoning suggests that it is a complicated curve. A current centered objective lens with a non-linear optic axis when used in conjunction with other lenses, leads to serious image errors if the nature of the specimen is such as to produce intense inelastic scattering.

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AN IN-SITU REFLECTION-SPECTROSCOPIC STUDY APPLIED TO ANODIC OXIDE FILMS ON IRON, NICKEL, AND TITANIUM

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19831039 ◽

1983 ◽

Vol 44 (C10) ◽

pp. C10-191-C10-194 ◽

Cited By ~ 3

Author(s):

T. Ohtsuka ◽

K. Azumi ◽

N. Sato

Keyword(s):

Spectroscopic Study ◽

Oxide Films ◽

Anodic Oxide ◽

Anodic Oxide Films ◽

Iron Nickel

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Enhancing oxidation resistance of Cu during repeated melting by the in-situ formation of protective oxide films

Materials Letters ◽

10.1016/j.matlet.2020.129234 ◽

2021 ◽

Vol 286 ◽

pp. 129234

Author(s):

Yongli Guo ◽

Hui Cai ◽

Zhe Wang ◽

Xin Wang ◽

Peng Cao ◽

...

Keyword(s):

Oxidation Resistance ◽

Oxide Films ◽

Protective Oxide ◽

In Situ Formation

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Ultraviolet Absorption Spectra of Anodic Zirconium Oxide Films

The Journal of Chemical Physics ◽

10.1063/1.1700935 ◽

1960 ◽

Vol 32 (1) ◽

pp. 310-311 ◽

Cited By ~ 12

Author(s):

R. E. Salomon ◽

W. M. Graven ◽

G. B. Adams

Keyword(s):

Absorption Spectra ◽

Zirconium Oxide ◽

Oxide Films ◽

Ultraviolet Absorption

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Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

MRS Proceedings ◽

10.1557/proc-567-51 ◽

1999 ◽

Vol 567 ◽

Cited By ~ 1

Author(s):

Masayuki Suzuki ◽

Yoji Saito

Keyword(s):

Photoelectron Spectroscopy ◽

High Vacuum ◽

Oxide Films ◽

Silicon Surfaces ◽

Gaseous Mixtures ◽

X Ray ◽

Initial Stage ◽

Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

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