Hydrogen plasma treatment of silicon surfaces studied by in-situ spectroscopic ellipsometry

1990 ◽  
Vol 46 (1-4) ◽  
pp. 435-440 ◽  
Author(s):  
P. Raynaud ◽  
J.P. Booth ◽  
C. Pomot
Keyword(s):  
Plasma Treatment ◽  
Spectroscopic Ellipsometry ◽  
Hydrogen Plasma ◽  
Silicon Surfaces

In Situ Spectroscopic Ellipsometry Study of the Oxide Etching and Surface Damaging Processes on Silicon Under Hydrogen Plasma

1999 ◽  
Vol 591 ◽  
Author(s):  
I.M. Vargas ◽  
J.Y. Manso ◽  
J.R. Guzmán ◽  
B.R. Weiner ◽  
G. Morell
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Surface Damage ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Si Substrates ◽  
Oxide Etching

ABSTRACTWe employed in situ ellipsometry in the monitoring of surface damage to monocrystalline silicon (Si) substrates under hydrogen plasma conditions. These measurements were complemented with spectroscopic ellipsometry and Raman spectroscopy, in order to characterize the surface conditions. It was found that heating the Si substrate to 700°C in the presence of molecular hydrogen produces etching of the native oxide layer, which is typically 10 Å thick. When the already hot and bare silicon surface is submitted to hydrogen plasma, it deteriorates very fast, becoming rough and full of voids. Modeling of the spectroscopic ellipsometry data was used to obtain a quantitative physical picture of the surface damage, in terms of roughness layer t ickness and void fraction. The results indicate that by the time a thin film starts to grow on these silicon surfaces, like in the chemical vapor deposition of diamond, the roughness produced by the hydrogen plasma has already determined to a large extent the rough nature of the film to be grown.

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

2018 ◽  
Vol 8 (6) ◽  
pp. 1539-1545 ◽  
Author(s):  
Menglei Xu ◽  
Chong Wang ◽  
Twan Bearda ◽  
Eddy Simoen ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Heterojunction Solar Cells ◽  
Passivation Process ◽  
Silicon Heterojunction Solar Cells

Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry

2014 ◽  
Vol 141 (8) ◽  
pp. 084708 ◽  
Author(s):  
Aomar Hadjadj ◽  
Fadila Larbi ◽  
Mickaël Gilliot ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Hydrogen Plasma

Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment

2020 ◽  
Vol 20 (7) ◽  
pp. 4110-4113 ◽  
Author(s):  
Yi-Ming Chen ◽  
Chien-Hung Wu ◽  
Kow-Ming Chang ◽  
Yu-Xin Zhang ◽  
Ni Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Atmospheric Pressure Plasma ◽  
Oxide Thin Film ◽  
Pressure Plasma

Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm2/V · S), larger Ion/Ioff ratio (>106), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780–1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497–1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114–5117). The results show that with appropriate flow ratio of Ar/H2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (μFE) 19.7 cm2/V · S, threshold voltage (VT) 1.18 V, subthreshold swing (SS) 81 mV/decade, and Ion/Ioff ratio 5.35×107.

scholarly journals Metal/GaN contacts studied by electron spectroscopies

2000 ◽  
Vol 5 (S1) ◽  
pp. 915-921
Author(s):  
J. Dumont ◽  
R. Caudano ◽  
R. Sporken ◽  
E. Monroy ◽  
E. Muñoz ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydrogen Plasma ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
X Ray

Au/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoechiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN were measured using XPS.

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