Low‐temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputtering

1980 ◽  
Vol 36 (8) ◽  
pp. 643-645 ◽  
Author(s):  
T. Shiosaki ◽  
T. Yamamoto ◽  
T. Oda ◽  
A. Kawabata
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Aln Film ◽  
Planar Magnetron

Low Temperature Growth of Piezoelectric Films by RF Reactive Planar Magnetron Sputtering

1981 ◽  
Vol 20 (S3) ◽  
pp. 149 ◽  
Author(s):  
Tadashi Shiosaki ◽  
Takashi Yamamoto ◽  
Takafumi Oda ◽  
Kazushige Harada ◽  
Akira Kawabata
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Planar Magnetron ◽  
Piezoelectric Films

LOW-TEMPERATURE GROWTH AND PHOTOLUMINESCENCE OF SiCN NANOPARTICLE FILM BY CONSECUTIVE RF MAGNETRON SPUTTERING

2004 ◽  
Vol 11 (06) ◽  
pp. 515-519 ◽  
Author(s):  
M. XU ◽  
V. M. NG ◽  
S. Y. HUANG ◽  
S. Y. XU
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Diffraction Intensity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Pl Intensity ◽  
Aln Buffer ◽  
Nanoparticle Film

Low-temperature growth of SiCN nanoparticle films on an AlN buffer layer on Si (100) by consecutive RF magnetron sputtering is reported. The visible photoluminescence (PL) is observed between 620 and 670 nm using a single photo excitation at 514.5 nm. The growth of film at room temperature is found to yield the strongest PL intensity, whereas the film grown at 200°C corresponds to the lowest PL intensity. A similar variation of SiC diffraction intensity is also observed in XRD spectra. The photoluminescence of the SiCN film is discussed on the base of the morphological, structural and elemental analyse.

Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness

2015 ◽  
Vol 581 ◽  
pp. 39-47 ◽  
Author(s):  
Tetsuhide Shimizu ◽  
Yoshikazu Teranishi ◽  
Kazuo Morikawa ◽  
Hidetoshi Komiya ◽  
Tomotaro Watanabe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Pulse Duration ◽  
High Power ◽  
High Hardness ◽  
Wurtzite Phase ◽  
Temperature Growth ◽  
Low Temperature Growth

In situ low temperature growth of poly-crystalline germanium thin film on glass by RF magnetron sputtering

2010 ◽  
Vol 94 (9) ◽  
pp. 1501-1505 ◽  
Author(s):  
Chao-Yang Tsao ◽  
Jürgen W. Weber ◽  
Patrick Campbell ◽  
Gavin Conibeer ◽  
Dengyuan Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Crystalline Germanium

Low Temperature Growth of PZT(52/48) Thin Films using Rf Magnetron Sputtering Method

1996 ◽  
Vol 433 ◽  
Author(s):  
Tae Song Kim ◽  
Dong Joo Kim ◽  
Jeon Kook Lee ◽  
Hyung Jin Jung
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Rf Magnetron Sputtering ◽  
Grown Film ◽  
Temperature Growth ◽  
Low Temperature Growth

AbstractComparatively low temperature growth of Pb(Zr0.52Ti0.48)O3 thin films was accomplished by using rf magnetron sputtering process. Well crystallized PZT thin films (4000Å thickness) were synthesized on Pt/Ti/SiO2/Si(100) substrate at the temperature as low as 5200°C. The polycrystalline PZT perovskite phase formation was confirmed with XRD analysis. Remanent polarization(Pr) and coercive field(Ec) of as-grown film (4000Å) were 8–30 μC/cm2 and 24–64 kV/cm with the applied voltage variation(5–17 V). The post annealing enhances the electrical properties even at 500°C, which is below the as-grown temperature(520°C). The increase of annealing temperature resulted in the consequent increase of remanent polarization and the decrease of coercive field. The values of dielectric constant(ε′ ) and tan δ measured with small signal sign wave(1V, 10kHz) were 1207 and 0.066 in case of as-grown film (4000Å).

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