Low-temperature growth of SiCN nanoparticle films on an AlN buffer layer on Si (100) by consecutive RF magnetron sputtering is reported. The visible photoluminescence (PL) is observed between 620 and 670 nm using a single photo excitation at 514.5 nm. The growth of film at room temperature is found to yield the strongest PL intensity, whereas the film grown at 200°C corresponds to the lowest PL intensity. A similar variation of SiC diffraction intensity is also observed in XRD spectra. The photoluminescence of the SiCN film is discussed on the base of the morphological, structural and elemental analyse.