Properties of high quality GaP single crystals grown by computer controlled liquid encapsulated Czochralski technique

1982 ◽  
Vol 41 (9) ◽  
pp. 841-843 ◽  
Author(s):  
Y. Kokubun ◽  
S. Washizuka ◽  
J. Ushizawa ◽  
M. Watanabe ◽  
T. Fukuda
2014 ◽  
Vol 213 ◽  
pp. 160-164 ◽  
Author(s):  
T.A. Gavrilova ◽  
N.V. Ivannikova ◽  
V.N. Shlegel ◽  
V.D. Grigorieva ◽  
S.F. Solodovnikov ◽  
...  

High-quality Na2W2O7 single crystals have been grown by low temperature gradient Czochralski technique (LTG Cz). The phase purity of grown crystals has been verified by XRD analysis. A set of oxide compositions based on Na2W2O7 and doped with Ce and special additions for charge compensation has been prepared by solid state synthesis. The formation of Na2W2O7-based solid solutions is found at as high Ce content as ~ 5 mol%.


1987 ◽  
Vol 48 (C1) ◽  
pp. C1-595-C1-598 ◽  
Author(s):  
M. OHTOMO ◽  
S. AHMAD ◽  
R. W. WHITWORTH
Keyword(s):  

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.


1994 ◽  
Vol 91 (8) ◽  
pp. 615-619 ◽  
Author(s):  
J.I. Gorina ◽  
G.A. Kaljushnaia ◽  
V.I. Ktitorov ◽  
V.P. Martovitsky ◽  
V.V. Rodin ◽  
...  

2006 ◽  
Vol 376-377 ◽  
pp. 745-748 ◽  
Author(s):  
M. Yoneta ◽  
K. Yoshino ◽  
M. Ohishi ◽  
H. Saito

2013 ◽  
Vol 154 ◽  
pp. 60-63 ◽  
Author(s):  
K. Naruse ◽  
T. Kawamata ◽  
M. Ohno ◽  
Y. Matsuoka ◽  
K. Kumagai ◽  
...  

2018 ◽  
Vol 11 (12) ◽  
pp. 125501 ◽  
Author(s):  
Yasunori Tanaka ◽  
Keita Shikata ◽  
Ryota Murai ◽  
Yoshinori Takahashi ◽  
Masayuki Imanishi ◽  
...  

2021 ◽  
Vol 2119 (1) ◽  
pp. 012140
Author(s):  
N I Matskevich ◽  
V N Shlegel ◽  
D A Samoshkin ◽  
S V Stankus ◽  
A N Semerikova ◽  
...  

Abstract For the first time, single crystals of undoped lithium tungstate and lithium tungstate doped by 1.25% molybdenum were grown by the low-temperature-gradient Czochralski technique. The standard formation enthalpies, lattices enthalpies, stabilization energies, and the heat capacity were determined in the temperature range of 320-997 K. The lattice enthalpy dependence on Mo content was constructed.


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