Metal‐oxide‐semiconductor field‐effect transistors and a ring oscillator fabricated in laser‐recrystallized polycrystalline silicon islands

Applied Physics Letters ◽

10.1063/1.93761 ◽

1983 ◽

Vol 42 (1) ◽

pp. 102-104 ◽

Author(s):

T. Nishimura ◽

Y. Akasaka ◽

H. Nakata ◽

A. Ishizu

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Ring Oscillator ◽

Oxide Semiconductor ◽

Silicon Islands

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Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC14 ◽

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

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Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO2/SiO2Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.10pb02 ◽

2011 ◽

Vol 50 (10S) ◽

pp. 10PB02 ◽

Author(s):

Takeo Matsuki ◽

Ranga Hettiarachchi ◽

Wei Feng ◽

Kenji Shiraishi ◽

Keisaku Yamada ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Nitrogen Incorporation

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A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3173179 ◽

2009 ◽

Vol 106 (2) ◽

pp. 024504 ◽

Author(s):

Kiran Sharma ◽

D. P. Joshi

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Electrical Conduction ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Thin Film

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Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric

Applied Physics Letters ◽

10.1063/1.1592634 ◽

2003 ◽

Vol 83 (2) ◽

pp. 308-310 ◽

Author(s):

C. W. Yang ◽

Y. K. Fang ◽

C. H. Chen ◽

S. F. Chen ◽

C. Y. Lin ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Shift ◽

High K ◽

Flatband Voltage ◽

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Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.076504 ◽

2012 ◽

Vol 51 ◽

pp. 076504

Author(s):

Takashi Ishigaki ◽

Ryuta Tsuchiya ◽

Yusuke Morita ◽

Nobuyuki Sugii ◽

Shinichiro Kimura ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO$_{2}$/SiO$_{2}$ Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.10pb02 ◽

2011 ◽

Vol 50 (10) ◽

pp. 10PB02 ◽

Author(s):

Takeo Matsuki ◽

Ranga Hettiarachchi ◽

Wei Feng ◽

Kenji Shiraishi ◽

Keisaku Yamada ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Nitrogen Incorporation

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Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC14 ◽

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

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Polycrystalline silicon/metal stacked gate for threshold voltage control in metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126218 ◽

2000 ◽

Vol 76 (14) ◽

pp. 1938-1940 ◽

Author(s):

Igor Polishchuk ◽

Chenming Hu

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Channel electron conduction in laser‐annealed polycrystalline silicon metal‐oxide semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.92157 ◽

1981 ◽

Vol 38 (10) ◽

pp. 770-772 ◽

Author(s):

Han‐Sheng Lee

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Conduction

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Characterization and passivation of band gap states in metal-oxide-semiconductor field effect transistors with polycrystalline silicon channel

18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa.2011.5992724 ◽

2011 ◽

Author(s):

Tae-Young Jang ◽

Dong-Hyoub Kim ◽

Jungwoo Kim ◽

Jun Suk Chang ◽

Hoichang Yang ◽

...

Keyword(s):

Metal Oxide ◽

Band Gap ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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