Magnesium doping of efficient GaAs and Ga0.75In0.25As solar cells grown by metalorganic chemical vapor deposition

1984 ◽  
Vol 45 (8) ◽  
pp. 895-897 ◽  
Author(s):  
C. R. Lewis ◽  
C. W. Ford ◽  
J. G. Werthen
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Magnesium Doping ◽  
Metalorganic Chemical

scholarly journals Erratum: High‐efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition

1977 ◽  
Vol 31 (10) ◽  
pp. 714-714
Author(s):  
R. D. Dupuis ◽  
P. D. Dapkus ◽  
R. D. Yingling ◽  
L. A. Moudy
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Metalorganic Chemical

High-Efficiency Monolithic Three-Terminal GaAs/Si Tandem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1401-1404 ◽  
Author(s):  
Tetsuo Soga ◽  
Mingju Yang ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Tandem Solar Cells ◽  
Metalorganic Chemical

Textured ZnO Thin Films for Solar Cells Grown by Metalorganic Chemical Vapor Deposition

1991 ◽  
Vol 30 (Part 2, No. 3B) ◽  
pp. L441-L443 ◽  
Author(s):  
Wilson W. Wenas ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Thin Films ◽  
Metalorganic Chemical

Photoluminescence of AlxGa1−xAs solar cells grown by metalorganic chemical vapor deposition

Solar Cells ◽  
1988 ◽  
Vol 25 (3) ◽  
pp. 287-297 ◽  
Author(s):  
D. Kirillov ◽  
C.W. Ford ◽  
A. Bivas ◽  
R.A. Powell
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

scholarly journals Ge nanopillar solar cells epitaxially grown by metalorganic chemical vapor deposition

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Youngjo Kim ◽  
Nguyen Dinh Lam ◽  
Kangho Kim ◽  
Won-Kyu Park ◽  
Jaejin Lee
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Magnesium doping of (Al,Ga)As in metalorganic chemical vapor deposition

1986 ◽  
Vol 59 (10) ◽  
pp. 3549-3554 ◽  
Author(s):  
K. Tamamura ◽  
T. Ohhata ◽  
H. Kawai ◽  
C. Kojima
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Magnesium Doping ◽  
Metalorganic Chemical

Magnesium Doping of GaN by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Hongqiang Lu ◽  
Ishwara Bhat
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Base Layer ◽  
Magnesium Doping ◽  
Acceptor Concentration ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTP-type GaN films were grown on sapphire substrates in a horizontal metalorganic chemical vapor deposition system using (C5H5)2Mg (Cp2Mg) as the p-dopant source. It is found that the acceptor concentration in the post-growth annealed GaN samples increases with the Mg flow rate and reaches a peak value of 1×1019 cm−3 at Mg flow rate of 0.84 ĉmol/min. The films remain semi-insulating even after annealing when the Mg flow rate is higher than 1.08 ĉmol/min. The effects of annealing temperature and duration on the electrical properties of GaN are also investigated. The results confirm that a 800 °C, 30 minutes post-growth annealing in N2 ambient is sufficient to activate most of the Mg atoms. In addition, study of rapid thermal annealing of Mg-doped GaN was carried out and the results show that the p-type acceptor concentration obtained is comparable to the results obtained using furnace annealing process. Finally, GaN light emitting diodes (LEDs) are demonstrated using undoped layer as the n-type base layer in a p-on-n structure. The light emission spectra are dominated by the 430 nm peak, accompanied with two relatively weak peaks located at 380nm and 550nm.

Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition

1987 ◽  
Vol 51 (5) ◽  
pp. 364-366 ◽  
Author(s):  
M. B. Spitzer ◽  
C. J. Keavney ◽  
S. M. Vernon ◽  
V. E. Haven
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Indium Phosphide ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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