Magnesium Doping of GaN by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Hongqiang Lu ◽  
Ishwara Bhat
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Base Layer ◽  
Magnesium Doping ◽  
Acceptor Concentration ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTP-type GaN films were grown on sapphire substrates in a horizontal metalorganic chemical vapor deposition system using (C5H5)2Mg (Cp2Mg) as the p-dopant source. It is found that the acceptor concentration in the post-growth annealed GaN samples increases with the Mg flow rate and reaches a peak value of 1×1019 cm−3 at Mg flow rate of 0.84 ĉmol/min. The films remain semi-insulating even after annealing when the Mg flow rate is higher than 1.08 ĉmol/min. The effects of annealing temperature and duration on the electrical properties of GaN are also investigated. The results confirm that a 800 °C, 30 minutes post-growth annealing in N2 ambient is sufficient to activate most of the Mg atoms. In addition, study of rapid thermal annealing of Mg-doped GaN was carried out and the results show that the p-type acceptor concentration obtained is comparable to the results obtained using furnace annealing process. Finally, GaN light emitting diodes (LEDs) are demonstrated using undoped layer as the n-type base layer in a p-on-n structure. The light emission spectra are dominated by the 430 nm peak, accompanied with two relatively weak peaks located at 380nm and 550nm.

Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 631-634 ◽  
Author(s):  
Doo-Hyeb Youn ◽  
Mohamed Lachab ◽  
Maosheng Hao ◽  
Tomoya Sugahara ◽  
Hironori Takenaka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Activation Mechanism ◽  
P Type ◽  
Metalorganic Chemical ◽  
Mg Doped

Fabrication and characterization of ferroelectric Pb(ZrxTi1–x)O3 thin films by metalorganic chemical vapor deposition

1999 ◽  
Vol 14 (2) ◽  
pp. 487-493 ◽  
Author(s):  
Han Sang Song ◽  
Tae Song Kim ◽  
Chang Eun Kim ◽  
Hyung Jin Jung
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Pyrochlore Phase ◽  
Chemical Vapor ◽  
Spectra Analysis ◽  
Pzt Thin Films ◽  
Metalorganic Chemical

Ferroelectric Pb(Zr, Ti)O3 (PZT) thin films were grown on Pt/Ti/SiO2/Si, RuO2/Pt/Ti/SiO2/Si, and Pt/MgO substrates at the substrate temperature of 600 °C by the metalorganic chemical vapor deposition (MOCVD) method. Pb(C11H19O2)2(Pb(DPM)2), Ti(OiC3H7)4, and Zr(OtC4H9)4 as source material and Ar and O2 as a carrier gas and oxidizing agent were selected, respectively. In order to investigate the effect of Zr and Ti component changes on the growth aspect of PZT thin films, Zr and Ti source materials were varied by controlling Zr and Ti flow rate. From the Rutherford backscattering spectroscopy (RBS) measurement, it was confirmed that the composition of the films, particularly Pb content, changed with the increasing Zr flow rate. In addition, the x-ray diffraction (XRD) spectra analysis showed the existence of a Pb-deficient pyrochlore phase as well as ZrO2 as a secondary phase. From these results, it is believed that the higher Zr partial pressure in the gas phase reduces the sticking of the Pb precursor to the substrate. The film with Pb:Zr:Ti = 1:0.42:0.58 showed a dielectric constant of 816 at 1 MHz. The spontaneous polarization, remanent polarization, and coercive field measured from the RT66A by applying 3.5 V were 44.1 μC/cm2, 24.4 μC/cm2, and 59.6 kV/cm, respectively. The fatigue analysis of PZT thin films with Pb:Zr:Ti = 1:0.42:0.58 at an applied voltage of Vp-p = 5.4 V showed 40% degradation on the basis of initial polarization value after 109 cycles.

High Quality InP Epitaxial Growth Using Flow Rate Modulation Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 08 (04) ◽  
pp. 575-586
Author(s):  
M. K. Lee ◽  
C. C. Hu
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Atomic Scale ◽  
Optimum Growth ◽  
Rate Modulation ◽  
Metalorganic Chemical

The characteristics of modified flow rate modulation metalorganic chemical deposition is studied. From observation with the atomic force microscope, the flatness of a InP homoepitaxial layer is improved to atomic scale by phosphine modulation metalorganic chemical vapor deposition. The full width at half maximum 5.6 meV of photoluminescence at 77 K can be achieved under optimum growth conditions. The satellite peak around the near band emission can also be reduced to a negligible quantity under optimum growth conditions. Also, MFME can improve the electrical characteristics of the epilayer with higher electron mobility and lower compensation ratio.

Film microstructure-deposition condition relationships in the growth of epitaxial NiO films by metalorganic chemical vapor deposition on oxide and metal substrates

1999 ◽  
Vol 14 (3) ◽  
pp. 1132-1136 ◽  
Author(s):  
Anchuan Wang ◽  
John A. Belot ◽  
Tobin J. Marks
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Contamination ◽  
Metal Substrates ◽  
Nio Films ◽  
Metalorganic Chemical

High-quality epitaxial or highly textured NiO thin films can be grown at temperatures of 400–750°C by low-pressure metalorganic chemical vapor deposition (MOCVD) on MgO, SrTiO3, C-cut sapphire, as well as on single crystal and highly textured Ni (200) metal substrates using Ni(dpm)2 (dpm – dipivaloylmethanate) as the volatile precursor and O2 or H2O as the oxidizer/protonolyzer. X-ray diffraction (XRD), scanning electron microscopy/energy dispersive detection (SEM/EDX), and atomic force microscopy (AFM) confirm that the O2-derived NiO films are smooth and that the quality of the epitaxy can be improved by decreasing the growth temperature and/or the precursor flow rate. However, low growth temperatures (400–500 °C) lead to rougher surfaces and carbon contamination. The H2O-derived NiO films, which can be obtained only at relatively high temperatures (650–750 °C), exhibit slightly broader ω scan full width half-maximum (FWHM) values and rougher surfaces but no carbon contamination. Using H2O as the oxidizer/protonolyzer, smooth and highly textured NiO (111) films can be grown on easily oxidized single crystal and highly textured Ni (200) metal substrates, which is impossible when O2 is the oxidizer. The textural quality of these films depends on both the quality of the metal substrates and the gaseous precursor flow rate.

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