Defect Characterization of High-Rate Deposited Hydrogenated Amorphous Silicon Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Florence Y. M. Chan ◽  
Y. W. Lam ◽  
Y. C. Chan ◽  
S. H. Lin ◽  
X. Y. Lin ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Large Scale ◽  
Low Cost ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
High Rate ◽  
Semiconductor Film ◽  
Scale Production ◽  
State Densities ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of a-Si:H films has become one of the key techniques for low-cost, large-scale production of thin film devices. Hydrogenated amorphous silicon films were fabricated with a thermocatalytic PCVD method of which the deposition rate was up to 1.5 nm/sec. The Heterojunction Monitored Capacitance method was employed to determine the midgap-state densities in the undoped semiconductor film from high frequency C-V characteristics. Experimental results showed that the thermocatalytic PCVD method is an effective way to produce high-rate deposited a-Si:H films.

Studies of subgap absorption and related parameters by the constant photocurrent method of high rate deposited hydrogenated amorphous silicon films

1991 ◽  
Vol 203 (2) ◽  
pp. 251-257 ◽  
Author(s):  
Ajay Tyagi ◽  
O.S. Panwar ◽  
B.S. Satyanarayan ◽  
P.N. Dixit ◽  
Tanay Seth ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
High Rate ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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