High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V

2021 ◽  
pp. 2000576
Author(s):  
Hao Xue ◽  
Kamal Hussain ◽  
Vishank Talesara ◽  
Towhidur Razzak ◽  
Mikhail Gaevski ◽  
...  
Keyword(s):  
Current Density ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Density Enhancement

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

High Current Density SmTiO3/SrTiO3 Field-Effect Transistors

2020 ◽  
Vol 2 (2) ◽  
pp. 510-516
Author(s):  
Hareesh Chandrasekar ◽  
Kaveh Ahadi ◽  
Towhidur Razzak ◽  
Susanne Stemmer ◽  
Siddharth Rajan
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current

High-power Organic Field-effect Transistors Using a Three-dimensional Structure

2010 ◽  
Vol 1270 ◽  
Author(s):  
M. Uno ◽  
Yuri Hirose ◽  
Kengo Nakayama ◽  
Takafumi Uemura ◽  
Yasuhiro Nakazawa ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Three Dimensional ◽  
Columnar Structure ◽  
Dimensional Structure ◽  
High Current ◽  
Organic Field Effect Transistors ◽  
Switching Speed

AbstractThree-dimensional organic field-effect transistors with multiple sub-micrometer channels are developed to exhibit high current density and high switching speed. The sub-micrometer channels are arranged perpendicularly to substrates and are defined by the height of a multi-columnar structure fabricated without using electron-beam-lithography technique. For devices with dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm2 and fast switching within 200 ns are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.

scholarly journals High current density InAsSb/GaSb tunnel field effect transistors

2012 ◽  
Author(s):  
Anil W. Dey ◽  
B. Mattias Borg ◽  
Bahram Ganjipour ◽  
Martin Ek ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current
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