Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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Modelling the threshold voltage of p‐channel enhancement‐mode GaN heterostructure field‐effect transistors

IET Power Electronics ◽

10.1049/iet-pel.2017.0438 ◽

2018 ◽

Vol 11 (4) ◽

pp. 675-680 ◽

Cited By ~ 3

Author(s):

Ashwani Kumar ◽

Maria Merlyne De Souza

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

Applied Physics Express ◽

10.1143/apex.4.114101 ◽

2011 ◽

Vol 4 (11) ◽

pp. 114101 ◽

Cited By ~ 21

Author(s):

Daniel Morgan ◽

Mahbuba Sultana ◽

Husna Fatima ◽

Sho Sugiyama ◽

Qhalid Fareed ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Threshold voltage drift of InPn‐channel enhancement mode metal‐insulator‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.99423 ◽

1988 ◽

Vol 52 (6) ◽

pp. 495-497 ◽

Cited By ~ 5

Author(s):

J. G. Johnson ◽

S. R. Forrest ◽

C. R. Zeisse ◽

R. Nguyen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Voltage Drift

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Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation

Applied Physics Letters ◽

10.1063/1.3446891 ◽

2010 ◽

Vol 96 (24) ◽

pp. 243506 ◽

Cited By ~ 18

Author(s):

Suk Choi ◽

Hee Jin Kim ◽

Zachary Lochner ◽

Yun Zhang ◽

Yi-Che Lee ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Enhancement Mode ◽

Mode Operation ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.202000576 ◽

2021 ◽

pp. 2000576

Author(s):

Hao Xue ◽

Kamal Hussain ◽

Vishank Talesara ◽

Towhidur Razzak ◽

Mikhail Gaevski ◽

...

Keyword(s):

Current Density ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

High Current Density ◽

High Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Density Enhancement

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Applied Physics Express ◽

10.1143/apex.4.114102 ◽

2011 ◽

Vol 4 (11) ◽

pp. 114102 ◽

Cited By ~ 53

Author(s):

Herwig Hahn ◽

Gerrit Lükens ◽

Nico Ketteniss ◽

Holger Kalisch ◽

Andrei Vescan

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

Recessed Gate

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High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5097338 ◽

2019 ◽

Vol 37 (4) ◽

pp. 041205 ◽

Cited By ~ 1

Author(s):

Daiki Hosomi ◽

Keita Furuoka ◽

Heng Chen ◽

Saki Saito ◽

Toshiharu Kubo ◽

...

Keyword(s):

Breakdown Voltage ◽

Barrier Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance

Applied Physics Letters ◽

10.1063/1.97105 ◽

1986 ◽

Vol 49 (9) ◽

pp. 513-515 ◽

Cited By ~ 9

Author(s):

A. Antreasyan ◽

P. A. Garbinski ◽

V. D. Mattera ◽

H. Temkin

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

High Transconductance ◽

Very High

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