Fabrication of free‐standing single‐crystal silicon wires

1988 ◽  
Vol 52 (10) ◽  
pp. 834-835 ◽  
Author(s):  
A. Potts ◽  
D. G. Hasko ◽  
J. R. A. Cleaver ◽  
H. Ahmed
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Free Standing ◽  
Crystal Silicon

Free-standing Single Crystal Silicon Nanoribbons

2001 ◽  
Vol 123 (44) ◽  
pp. 11095-11096 ◽  
Author(s):  
Wensheng Shi ◽  
Hongying Peng ◽  
Ning Wang ◽  
Chi Pui Li ◽  
Lu Xu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Free Standing ◽  
Crystal Silicon

ChemInform Abstract: Free-Standing Single Crystal Silicon Nanoribbons.

ChemInform ◽  
2010 ◽  
Vol 33 (4) ◽  
pp. no-no
Author(s):  
Wensheng Shi ◽  
Hongying Peng ◽  
Ning Wang ◽  
Chi Pui Li ◽  
Lu Xu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Free Standing ◽  
Crystal Silicon

Large-Area Free-Standing Ultrathin Single-Crystal Silicon as Processable Materials

Nano Letters ◽  
2013 ◽  
Vol 13 (9) ◽  
pp. 4393-4398 ◽  
Author(s):  
Shuang Wang ◽  
Benjamin D. Weil ◽  
Yanbin Li ◽  
Ken Xingze Wang ◽  
Erik Garnett ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Large Area ◽  
Free Standing ◽  
Crystal Silicon

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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