Fabrication of Free-Standing Single-Crystal Silicon Nanostructures for the Study of Thermal Transport and Defect Scattering in Low Dimensional Systems

1990 ◽  
Vol 29 (Part 1, No. 11) ◽  
pp. 2675-2679 ◽  
Author(s):  
A. Potts ◽  
D. A. Williams ◽  
R. J. Young ◽  
R. J. Blaikie ◽  
R. A. McMahon ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Transport ◽  
Single Crystal Silicon ◽  
Silicon Nanostructures ◽  
Free Standing ◽  
Crystal Silicon ◽  
Low Dimensional

Fabrication of free‐standing single‐crystal silicon wires

1988 ◽  
Vol 52 (10) ◽  
pp. 834-835 ◽  
Author(s):  
A. Potts ◽  
D. G. Hasko ◽  
J. R. A. Cleaver ◽  
H. Ahmed
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Free Standing ◽  
Crystal Silicon

Free-standing Single Crystal Silicon Nanoribbons

2001 ◽  
Vol 123 (44) ◽  
pp. 11095-11096 ◽  
Author(s):  
Wensheng Shi ◽  
Hongying Peng ◽  
Ning Wang ◽  
Chi Pui Li ◽  
Lu Xu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Free Standing ◽  
Crystal Silicon

ChemInform Abstract: Free-Standing Single Crystal Silicon Nanoribbons.

ChemInform ◽  
2010 ◽  
Vol 33 (4) ◽  
pp. no-no
Author(s):  
Wensheng Shi ◽  
Hongying Peng ◽  
Ning Wang ◽  
Chi Pui Li ◽  
Lu Xu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Free Standing ◽  
Crystal Silicon

Large-Area Free-Standing Ultrathin Single-Crystal Silicon as Processable Materials

Nano Letters ◽  
2013 ◽  
Vol 13 (9) ◽  
pp. 4393-4398 ◽  
Author(s):  
Shuang Wang ◽  
Benjamin D. Weil ◽  
Yanbin Li ◽  
Ken Xingze Wang ◽  
Erik Garnett ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Large Area ◽  
Free Standing ◽  
Crystal Silicon

scholarly journals Precision control of thermal transport in cryogenic single-crystal silicon devices

2014 ◽  
Vol 115 (12) ◽  
pp. 124508 ◽  
Author(s):  
K. Rostem ◽  
D. T. Chuss ◽  
F. A. Colazo ◽  
E. J. Crowe ◽  
K. L. Denis ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Transport ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Precision Control ◽  
Silicon Devices

A Simple Process for Lateral Single Crystal Silicon Nanowires

2002 ◽  
Author(s):  
Veljko Milanovic´ ◽  
Lance Doherty
Keyword(s):  
Single Crystal ◽  
Silicon Nanowires ◽  
Direct Contact ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Silicon Nanostructures ◽  
Device Layer ◽  
Crystal Silicon ◽  
Simple Process ◽  
20 Nm

In a single-mask standard photolithography based process and a single etch step, lateral silicon nanowires are fabricated according to arbitrary layout and over a range of diameters and lengths. Nanowires with diameters from ∼20 nm and with lengths ranging from 2 μm to 100 μm were fabricated in direct contact with two silicon probing pads for measurement. These nanowires are electrically isolated in the silicon-on-insulator wafer device layer, and suspended over the substrate, thereby increasing thermal and electrical isolation. Because they are formed from single crystal silicon, minimal defects are expected. The addition of a polysilicon deposition and patterning further enhances the process by allowing coaxial silicon nanostructures.

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