Carrier recombination processes in Fe-doped GaN studied by optical pump–probe techniques

2020 ◽  
Vol 127 (24) ◽  
pp. 245705
Author(s):  
Patrik Ščajev ◽  
Kęstutis Jarašiūnas ◽  
Jacob Leach
2015 ◽  
Vol 821-823 ◽  
pp. 245-248 ◽  
Author(s):  
Paulius Grivickas ◽  
Stephen Sampayan ◽  
Kipras Redeckas ◽  
Mikas Vengris ◽  
Vytautas Grivickas

Excess carrier dynamics in 6H-SiC substrates with n- and p-type moderate doping were detected using femtosecond pump-probe measurements with supercontinuum probing. Band-to-band recombination and carrier trapping were determined as the main recombination processes in both materials. Spectral fingerprints corresponding to each of these recombination components were obtained using the global and target analysis. It was shown that, in spite of background doping, the band-to-band recombination in 6H-SiC is dominated by the excess electron absorption component and the carrier trapping is dominated by the excess hole absorption.


2003 ◽  
Vol 770 ◽  
Author(s):  
Nathanael Smith ◽  
Max J. Lederer ◽  
Marek Samoc ◽  
Barry Luther-Davies ◽  
Robert G. Elliman

AbstractOptical pump-probe measurements were performed on planar slab waveguides containing silicon nanocrystals in an attempt to measure optical gain from photo-excited silicon nanocrystals. Two experiments were performed, one with a continuous-wave probe beam and a pulsed pump beam, giving a time resolution of approximately 25 ns, and the other with a pulsed pump and probe beam, giving a time resolution of approximately 10 ps. In both cases the intensity of the probe beam was found to be attenuated by the pump beam, with the attenuation increasing monotonically with increasing pump power. Time-resolved measurements using the first experimental arrangement showed that the probe signal recovered its initial intensity on a time scale of 45-70 μs, a value comparable to the exciton lifetime in Si nanocrystals. These data are shown to be consistent with an induced absorption process such as confined carrier absorption. No evidence for optical gain was observed.


2016 ◽  
Vol 24 (23) ◽  
pp. 26363 ◽  
Author(s):  
Stefano Dominici ◽  
Hanqing Wen ◽  
Francesco Bertazzi ◽  
Michele Goano ◽  
Enrico Bellotti

2008 ◽  
Vol 1 ◽  
pp. 121301 ◽  
Author(s):  
Shigemi Mizukami ◽  
Hiroyuki Abe ◽  
Daisuke Watanabe ◽  
Mikihiko Oogane ◽  
Yasuo Ando ◽  
...  

Author(s):  
Д.И Хусяинов ◽  
А.М. Буряков ◽  
В.Р. Билык ◽  
Е.Д. Мишина ◽  
Д.С. Пономарев ◽  
...  
Keyword(s):  

Методами оптического зондирования при фемтосекундной лазерной накачке (optical pump-probe) и терагерцевой спектроскопии во временной области исследовано влияние эпитаксиальных напряжений на динамику неравновесных носителей заряда, а также спектр терагерцевого излучения в пленках InyGa1-yAs. Продемонстрировано снижение времени жизни неравновесных носителей заряда и увеличение ширины спектра терагерцевого излучения для пленки InyGa1-yAs с большим механическим напряжением. DOI: 10.21883/PJTF.2017.22.45260.16958


Author(s):  
Joshua Alper ◽  
Aaron Schmidt ◽  
Kimberly Hamad-Schifferli

To facilitate analysis of nanoscale heat transfer in nanoparticle systems the thermal properties of ligand layers must be understood. To this end, we use an optical pump-probe technique to study the thermal transport across ligands on gold nanorods and into the solvent. We find that varying properties of the ligand can have large impacts on the thermal decay of a nanorod after exposure to a laser pulse. By raising the concentration of free CTAB from 1 mM and 10 mM in solutions, the CTAB layer’s effective thermal interface conductance increases three fold. The transition occurs near the CTAB critical micelle concentration. Similar results are found for other ligand layers.


2006 ◽  
Vol 532-533 ◽  
pp. 572-575
Author(s):  
Ming Zhou ◽  
Dong Qing Yuan ◽  
Li Peng Liu ◽  
Hui Xia Liu ◽  
Nai Fei Ren

Experiment setup of femtosecond laser pump probe was established, the time resolution of time-delay setting reached 67fs. By use of femtosecond laser with width of 30fs and wavelength is 796nm the dependence of transient change of reflectivity on delayed time in GaAs was measured by pump-probe method. By calculating the change of complex index of refraction (%n), free-carrier effect, lattice-temperature and carrier recombination contributions to relaxation curve was analyzed. When the carrier density N is 1.44×1018/cm3, free-carrier contribution to refraction index %nFC is -7.33×10-4, lattice-temperature %nLT is 0.85×10-4. Based on recombination rate equation, recombination lifetime of 980ps was deduced.


2004 ◽  
Author(s):  
Verner K. Thorsmølle ◽  
R D. Averitt ◽  
J Demsar ◽  
X Chi ◽  
S Tretiak ◽  
...  

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