Nondestructive measurements of depth distribution of carrier lifetimes in 4H–SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights

2020 ◽  
Vol 91 (12) ◽  
pp. 123902
Author(s):  
Takashi Hirayama ◽  
Keisuke Nagaya ◽  
Akira Miyasaka ◽  
Kazutoshi Kojima ◽  
Tomohisa Kato ◽  
...  
Keyword(s):  
Depth Distribution ◽  
Free Carrier ◽  
Epitaxial Layers ◽  
Free Carrier Absorption ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Carrier Absorption ◽  
Nondestructive Measurements

Time-resolved measurement of free carrier absorption, diffusivity, and internal quantum efficiency in silicon

2013 ◽  
Vol 103 (9) ◽  
pp. 092101 ◽  
Author(s):  
Jet Meitzner ◽  
Frederick G. Moore ◽  
Brock M. Tillotson ◽  
Stephen D. Kevan ◽  
Geraldine L. Richmond
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Time Resolved ◽  
Carrier Absorption

Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC

2011 ◽  
Vol 679-680 ◽  
pp. 205-208 ◽  
Author(s):  
Jawad ul Hassan ◽  
Patrik Ščajev ◽  
Kęstutis Jarašiūnas ◽  
Peder Bergman
Keyword(s):  
Diffusion Coefficient ◽  
Decay Time ◽  
Carrier Lifetime ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Time Resolved ◽  
Temperature Dependences ◽  
Carrier Absorption ◽  
Time Resolved Photoluminescence ◽  
And Diffusion

Free carrier dynamics has been studied in 4H- and 3C-SiC in a wide temperature range using time-resolved photoluminescence, free carrier absorption, and light induced transient grating techniques. Considerably high carrier lifetime was observed in 3C-SiC epitaxial layers grown on 4H-SiC substrates using hot-wall CVD with respect to previously reported values for 3C-SiC grown either on Si or on 6H-SiC substrates. The temperature dependences of carrier lifetime and diffusion coefficient for 4H- and 3C-SiC were compared. Shorter photoluminescence decay time with respect to free carrier absorption decay time was observed in the same 4H-SiC sample, while these techniques revealed similar trends in the carrier lifetime temperature dependencies. However, the latter dependences for hot-wall CVD-grown 3C layers were found different if measured by time resolved photoluminescence and free carrier absorption techniques.

Time-resolved Ellipsometry to Study Extreme Non-equilibrium Electron Dynamics in Nanostructured Semiconductors

2012 ◽  
Vol 1426 ◽  
pp. 395-400
Author(s):  
T. W. Roger ◽  
A. Kaplan
Keyword(s):  
Silicon Nanocrystals ◽  
Crystalline Silicon ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Electron Dynamics ◽  
Silicon Phase ◽  
Time Resolved ◽  
Pump Probe ◽  
Carrier Absorption ◽  
Nanostructured Semiconductors

ABSTRACTWe present a femtosecond pump-probe ellipsometer operating over a spectral range of 1.4 – 1.7 eV with a ∼50fs time resolution. The calibration and preliminary findings of the setup are discussed. We tested the apparatus on bulk crystalline silicon (not shown here) and on silicon nanocrystals embedded in an amorphous silicon phase. The ellipsometric angles (ψ, Δ) were determined as a function of time and wavelength. The results suggest that a simple Drude model of free carrier absorption is not sufficient to explain the findings.

4-QAM OFDM Data Switching via Free Carrier Absorption in Si-Rich SiC Waveguide

2021 ◽  
Vol 27 (3) ◽  
pp. 1-11
Author(s):  
Yen-Wei Hsueh ◽  
Chih-Hsien Cheng ◽  
Cai-Syuan Fu ◽  
Huai-Yung Wang ◽  
Bo-Ji Huang ◽  
...  
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Data Switching

Free carrier absorption in heavily doped silicon layers

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped
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