scholarly journals Electrical characteristics of a low-temperature, atmospheric-pressure helium plasma jet

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015323
Author(s):  
Hajime Sakakita ◽  
Tetsuji Shimizu ◽  
Satoru Kiyama
AIP Advances ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 125216
Author(s):  
Tetsuji Shimizu ◽  
Hiromasa Yamada ◽  
Masanori Fujiwara ◽  
Susumu Kato ◽  
Yuzuru Ikehara ◽  
...  

2013 ◽  
Vol 133 (5) ◽  
pp. 278-285
Author(s):  
Norimitsu Takamura ◽  
Douyan Wang ◽  
Takao Satoh ◽  
Takao Namihira ◽  
Hisato Saitoh ◽  
...  

AIP Advances ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 125218
Author(s):  
T. Y. Tang ◽  
H. S. Kim ◽  
G. H. Kim ◽  
B. Lee ◽  
H. J. Lee

2019 ◽  
Vol 16 (10) ◽  
pp. 1900104 ◽  
Author(s):  
Sameer A. Al‐Bataineh ◽  
Alex A. Cavallaro ◽  
Andrew Michelmore ◽  
Melanie N. Macgregor ◽  
Jason D. Whittle ◽  
...  

Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.


2020 ◽  
Vol 384 (19) ◽  
pp. 126497 ◽  
Author(s):  
G. Veda Prakash ◽  
Kiran Patel ◽  
Narayan Behera ◽  
Ajai Kumar

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