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Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures
Applied Physics Letters
◽
10.1063/5.0038705
◽
2021
◽
Vol 118
(17)
◽
pp. 173504
Author(s):
Xiaobo Liu
◽
Li Zheng
◽
Xinhong Cheng
◽
Lingyan Shen
◽
Shaoyu Liu
◽
...
Keyword(s):
Flat Band
◽
Flat Band Voltage
◽
Positive Shift
◽
Recessed Gate
Download Full-text
Related Documents
Cited By
References
Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere
Semiconductor Science and Technology
◽
10.1088/0268-1242/30/11/115008
◽
2015
◽
Vol 30
(11)
◽
pp. 115008
◽
Cited By ~ 9
Author(s):
Jae-Gil Lee
◽
Hyun-Seop Kim
◽
Jung-Yeon Lee
◽
Kwang-Seok Seo
◽
Ho-Young Cha
Keyword(s):
Oxygen Atmosphere
◽
Flat Band
◽
Flat Band Voltage
◽
Voltage Shift
◽
Recessed Gate
Download Full-text
Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature
Applied Physics Express
◽
10.35848/1882-0786/abc516
◽
2020
◽
Vol 13
(11)
◽
pp. 111006
Author(s):
Li-Chuan Sun
◽
Chih-Yang Lin
◽
Po-Hsun Chen
◽
Tsung-Ming Tsai
◽
Kuan-Ju Zhou
◽
...
Keyword(s):
Low Temperature
◽
Trap Density
◽
Flat Band
◽
Interface Trap Density
◽
Interface Trap
◽
Flat Band Voltage
◽
Voltage Shift
Download Full-text
New method of determination of the flat-band voltage in SOI MOS structures
Solid-State Electronics
◽
10.1016/0038-1101(86)90019-5
◽
1986
◽
Vol 29
(9)
◽
pp. 947-950
◽
Cited By ~ 6
Author(s):
Krzysztof Iniewski
◽
Andrzej Jakubowski
Keyword(s):
New Method
◽
Flat Band
◽
Flat Band Voltage
◽
Method Of Determination
◽
Mos Structures
Download Full-text
Flat-band voltage of a-Si pin solar cells from spectral characteristics
10.1109/pvsc.1988.105684
◽
1988
◽
Cited By ~ 1
Author(s):
H. Pfleiderer
◽
W. Kusian
◽
E. Gunzel
◽
J. Grabmaier
Keyword(s):
Solar Cells
◽
Spectral Characteristics
◽
Flat Band
◽
Flat Band Voltage
Download Full-text
(Invited) Study on Impact of MOS Interface Passivation Processes on Band Alignment and Flat-Band Voltage of 4H-SiC Gate Stacks
ECS Meeting Abstracts
◽
10.1149/ma2021-0230940mtgabs
◽
2021
◽
Vol MA2021-02
(30)
◽
pp. 940-940
Author(s):
Koji Kita
Keyword(s):
Band Alignment
◽
Flat Band
◽
Flat Band Voltage
◽
Gate Stacks
◽
Interface Passivation
Download Full-text
Study on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode
Journal of Nanomedicine & Nanotechnology
◽
10.4172/2157-7439.s7-005
◽
2015
◽
Vol 01
(s7)
◽
Author(s):
Jianfeng Gao
◽
Hong Yang
Keyword(s):
Chemical Vapor
◽
Oxide Thickness
◽
Flat Band
◽
Organic Chemical
◽
Flat Band Voltage
◽
Equivalent Oxide Thickness
◽
Metal Gate
◽
Tin Film
◽
Metal Organic
◽
Organic Chemical Vapor Deposition
Download Full-text
Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling
Scientific Reports
◽
10.1038/srep43561
◽
2017
◽
Vol 7
(1)
◽
Cited By ~ 1
Author(s):
Sung Heo
◽
Hyoungsun Park
◽
Dong-Su Ko
◽
Yong Su Kim
◽
Yong Koo Kyoung
◽
...
Keyword(s):
Work Function
◽
Direct Evidence
◽
Depth Profiling
◽
Flat Band
◽
Flat Band Voltage
◽
Voltage Shift
Download Full-text
Comprehensive Investigation of Flat-band Voltage Modulation by High-K NPT for Advanced HKMG Technology
2019 China Semiconductor Technology International Conference (CSTIC)
◽
10.1109/cstic.2019.8755681
◽
2019
◽
Author(s):
Jiaxin Yao
◽
Zhaozhao Hou
◽
Wenjuan Xiong
◽
Qingzhu Zhang
◽
Zhenhua Wu
◽
...
Keyword(s):
Flat Band
◽
Flat Band Voltage
◽
Comprehensive Investigation
◽
High K
Download Full-text
Dependence of flat‐band voltage of metal‐oxide semiconductor structures on phosphosilicate‐glass growing conditions
Applied Physics Letters
◽
10.1063/1.91833
◽
1980
◽
Vol 37
(2)
◽
pp. 226-228
Author(s):
G. Masetti
◽
M. Severi
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Flat Band
◽
Flat Band Voltage
◽
Semiconductor Structures
◽
Phosphosilicate Glass
◽
Growing Conditions
Download Full-text
Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks
Applied Physics Letters
◽
10.1063/1.3173814
◽
2009
◽
Vol 95
(1)
◽
pp. 012906
◽
Cited By ~ 34
Author(s):
L. Lin
◽
J. Robertson
Keyword(s):
Flat Band
◽
Flat Band Voltage
◽
Gate Stacks
◽
Atomic Mechanism
Download Full-text
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