Strain-tuning PtSe2 for high ON-current lateral tunnel field-effect transistors

2021 ◽  
Vol 119 (7) ◽  
pp. 073102
Author(s):  
Manasa Kaniselvan ◽  
Youngki Yoon
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Lateral Tunnel

Stochastic Variability in Silicon Double-Gate Lateral Tunnel Field-Effect Transistors

2013 ◽  
Vol 60 (1) ◽  
pp. 84-91 ◽  
Author(s):  
Greg Leung ◽  
Chi On Chui
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Lateral Tunnel

scholarly journals Tunnel field-effect transistors for sensitive terahertz detection

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
I. Gayduchenko ◽  
S. G. Xu ◽  
G. Alymov ◽  
M. Moskotin ◽  
I. Tretyakov ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Electromagnetic Waves ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Noise ◽  
Thz Radiation ◽  
Observational Astronomy ◽  
Terahertz Detection ◽  
Lateral Tunnel ◽  
Tunnel Transistors

AbstractThe rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG’s electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/$$\sqrt{{\rm{Hz}}}$$ Hz ) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors’ responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.

APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-423-C4-432 ◽  
Author(s):  
P. G. Le Comber ◽  
A. J. Snell ◽  
K. D. Mackenzie ◽  
W. E. Spear
Keyword(s):  
Liquid Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Liquid Crystal Displays ◽  
Logic Circuits ◽  
Integrated Logic

Ambipolar Characteristics of Solution Processed Bilayer Field Effect Transistors based on Poly(3-hexylthiophene) and fullerene derivatives

2008 ◽  
Author(s):  
Takeomi Morita ◽  
Syuichi Nagamatsu ◽  
Vipul Singh ◽  
Shinya Oku ◽  
Wataru Takashima ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Fullerene Derivatives

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional

A Calculation Model for Submicron Field-Effect Transistors Based on GaAs

2002 ◽  
Vol 58 (7-8) ◽  
pp. 9
Author(s):  
S. A. Zuev ◽  
V. V. Starostenko ◽  
A. A. Shadrin
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Calculation Model
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