Molecular Beam Mass Spectrometry Studies of the Thermal Decomposition of Tetrakis(dimethylamino)Titanium

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela C. Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Flow Reactor ◽  
Chemical Vapor ◽  
Molecular Beam Mass Spectrometry ◽  
Gas Phase Chemistry ◽  
Temperature Rate ◽  
Phase Chemistry

AbstractTetrakis(dimethylamino)titanium (TDMAT) is an important precursor for TiN, TiCN, and TiSiN thin films in chemical vapor deposition. In order to better understand how the gas phase chemistry influences the formation of these films, the decomposition of TDMAT has been studied in a high-temperature flow reactor (HTFR) by molecular beam mass spectrometry (MBMS). Two kinetic regimes have been observed as a function of temperature. Rate expressions and mechanistic implications will be presented. Further studies are in progress to identify the gas phase species relevant to the decomposition mechanism of TDMAT.

Aspects of Gas Phase Chemistry During Chemical Vapor Deposition of Ti-Si-N Thin Films With Ti(NMe2)4 (TDMAT), NH3, and SiH4

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Similar Process ◽  
Process Conditions ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

AbstractSilane activation, predominantly in the gas phase, has been observed during the chemical vapor deposition of Ti-Si-N thin films using Ti(NMe2)4, tetrakis(dimethylamido)titanium, silane, and ammonia at 450°C, using molecular beam mass spectrometry. The extent of silane reactivity was dependent upon the relative amounts of Ti(NMe2)4and NH3. Additionally, each TDMAT molecule activates multiple silane molecules. Ti-Si-N thin films were deposited using similar process conditions as the molecular beam experiments, and RBS and XPS were used to determine their atomic composition. The variations of the Ti:Si ratio in the films as a function of Ti(NMe2)4 and NH3 flows were consistent with the changes in silane reactivity under similar conditions.

Using Molecular-Beam Mass Spectrometry to Study the Pecvd of Diamondlike Carbon Films

1993 ◽  
Vol 334 ◽  
Author(s):  
I.B. Graff ◽  
R.A. Pugliese ◽  
P.R. Westmoreland
Keyword(s):  
Mass Spectrometry ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Total Flow ◽  
Measured Concentration ◽  
Molecular Beam Mass Spectrometry ◽  
Diamondlike Carbon

AbstractMolecular-beam mass spectrometry has been used to study plasma-enhanced chemical vapor deposition (PECVD) of diamondlike carbon films. A threshold-ionization technique was used to identify and quantify species in the plasma. Mole fractions of H, H2, CH4, C2H2, C2H6 and Ar were measured in an 83.3% CH4/Ar mixture at a pressure of 0.1 torr and a total flow of 30 sccm. Comparisons were made between mole fractions measured at plasma powers of 25W and 50W. These results were compared to measured concentration profiles and to film growth rates.

scholarly journals Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

scholarly journals Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

2018 ◽  
Author(s):  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
Polla Rouf ◽  
Sean Barry ◽  
Lars Ojamäe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Chemistry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Group 13 ◽  
Gas Phase Chemistry ◽  
Device Applications ◽  
Phase Chemistry

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD.

scholarly journals Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

2019 ◽  
Author(s):  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
Polla Rouf ◽  
Sean Barry ◽  
Lars Ojamäe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Chemistry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Group 13 ◽  
Gas Phase Chemistry ◽  
Device Applications ◽  
Phase Chemistry

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD.

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