High-frequency and below bandgap anisotropic dielectric constants in α-(AlxGa1−x)2O3 ( 0≤x≤1)

2021 ◽  
Vol 119 (9) ◽  
pp. 092103
Author(s):  
Matthew Hilfiker ◽  
Ufuk Kilic ◽  
Megan Stokey ◽  
Riena Jinno ◽  
Yongjin Cho ◽  
...  
Keyword(s):  
High Frequency ◽  
Dielectric Constants ◽  
Anisotropic Dielectric

Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
The Other ◽  
Field Range ◽  
Anisotropic Dielectric ◽  
Dielectric Nonlinearity ◽  
La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

LOW LOSS DIELECTRIC MATERIALS FOR HIGH FREQUENCY APPLICATIONS

2009 ◽  
Vol 23 (17) ◽  
pp. 3649-3654 ◽  
Author(s):  
MOHAN V. JACOB
Keyword(s):  
High Frequency ◽  
Room Temperature ◽  
Low Cost ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Transmission Losses ◽  
Low Loss ◽  
Microwave Characterization ◽  
Materials Used ◽  
Low Temperature Electronics

The microwave properties of some of the low cost materials which can be used in high frequency applications with low transmission losses are investigated in this paper. One of the most accurate microwave characterization techniques, Split Post Dielectric Resonator technique (SPDR) is used for the experimental investigation. The dielectric constants of the 3 materials scrutinized at room temperature and at 10K are 3.65, 2.42, 3.61 and 3.58, 2.48, 3.59 respectively. The corresponding loss tangent values are 0.00370, 0.0015, 0.0042 and 0.0025, 0.0009, 0.0025. The high frequency transmission losses are comparable with many of the conventional materials used in low temperature electronics and hence these materials could be implemented in such applications.

A facile method for the preparation of aliphatic main-chain benzoxazine copolymers with high-frequency low dielectric constants

2018 ◽  
Vol 9 (21) ◽  
pp. 2913-2925 ◽  
Author(s):  
Ming Zeng ◽  
Jiangbing Chen ◽  
Qingyu Xu ◽  
Yiwan Huang ◽  
Zijian Feng ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
High Frequency ◽  
Main Chain ◽  
Polymerization Kinetics ◽  
Dielectric Constants ◽  
Low Dielectric

The effects of the reaction solvent on the preparation, polymerization kinetics, and high-frequency dielectric properties of aliphatic main-chain benzoxazine copolymers were investigated.

On the thermal ionization of trapped electrons in ionic solids

1955 ◽  
Vol 231 (1186) ◽  
pp. 308-320 ◽  
Keyword(s):  
Ground State ◽  
High Frequency ◽  
Ionic Crystal ◽  
Dielectric Constants ◽  
Variation Method ◽  
Lattice Vibrations ◽  
Appreciable Difference ◽  
Ionic Solids ◽  
Self Consistent ◽  
Consistent Method

The ground state of an electron trapped at a defect of the interstitial ion type in an ionic crystal is determined by a variation method in which the interaction between electron and lattice vibrations is treated on a dynamic basis. The results are com pared with static calculations using a self-consistent method, and it is shown that for certain ranges of the low- and high-frequency dielectric constants an appreciable difference in energy may occur.

Photoelastic behaviour and interionic potentials in alkali halide crystals

1981 ◽  
Vol 59 (10) ◽  
pp. 1359-1366 ◽  
Author(s):  
Jai Shanker ◽  
T. S. Verma ◽  
A. Cox ◽  
M. J. L. Sangster
Keyword(s):  
Shell Model ◽  
High Frequency ◽  
Alkali Halide ◽  
Dielectric Constants ◽  
Critical Test ◽  
Photoelastic Data ◽  
Comparison Of The Results ◽  
Alkali Halide Crystals ◽  
Derivatives Of ◽  
Photoelastic Behaviour

In order to make a critical test of some recently developed interionic potentials based on the shell model, the photoelastic behaviour of the alkali halide crystals has been investigated. Values of the strain derivatives of the static and high-frequency dielectric constants have been calculated from sets of potentials due to Catlow et al., Sangster et al., and Sangster and Atwood. A comparison of the results obtained with available experimental photoelastic data demonstrates the superiority of the second set of potentials of Catlow et al.

scholarly journals Dielectric Constants of a Binary Solution Near the Critical Solution Temperature

1973 ◽  
Vol 51 (4) ◽  
pp. 545-550 ◽  
Author(s):  
I. Lubezky ◽  
R. McIntosh
Keyword(s):  
High Frequency ◽  
Binary Solution ◽  
Critical Concentration ◽  
Low Frequency ◽  
Dielectric Constants ◽  
Solution Temperature ◽  
Dielectric Losses ◽  
Theoretical Studies ◽  
Critical Solution Temperature ◽  
Experimental Knowledge

The dielectric constants and dielectric losses of solutions of nitrobenzene and 2,2,4-trimethyl pentane have been measured near the critical solution temperature over a concentration range of 22–75% by weight and in the frequency regions of 5–60 and 1000 – 4000 kHz. It was found that below a critical concentration of 35% maxima existed in ε′ and ε″ at a temperature of 0.3 °C above the critical solution temperature. At higher concentrations the maxima disappeared and phase separation was preceded only by changes in the thermal coefficients dε′/dT and dε″/dT. The present study combined with others indicates that two regions of loss exist for the system near the critical temperature: low frequency losses of a conductive nature and high frequency losses of the Debye type. The published experimental knowledge of such systems remains insufficient to enable a thorough test of the theoretical studies published recently by Snider.

scholarly journals Optical properties and electronic polarizability of boron-antimonide semiconductor

2017 ◽  
Vol 5 (2) ◽  
pp. 43 ◽  
Author(s):  
Salah Daoud ◽  
Abdelhakim Latreche
Keyword(s):  
Optical Properties ◽  
High Frequency ◽  
Theoretical Data ◽  
Dielectric Constants ◽  
Electronic Polarizability ◽  
Micro Hardness ◽  
Plasmon Energy ◽  
Empirical Formulas ◽  
Electronegativity Difference ◽  
Static Dielectric Constants

The high-frequency and static dielectric constants, the reflex index, the total optical electronegativity difference, the bulk modulus, the micro-hardness, the plasmon energy and the electronic polarizability of cubic zincblende boron-antimonide semiconductor have been estimated by using some empirical formulas. These parameters are analyzed by comparing them against the available experimental and theoretical data. In general, our obtained results agree well with other theoretical data from the literature.

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