scholarly journals Polymerized hybrid Hf-based hydroquinone/Al2O3 bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory

APL Materials ◽  
2021 ◽  
Vol 9 (12) ◽  
pp. 121110
Author(s):  
Jin Lei ◽  
Wen-Juan Ding ◽  
Chang Liu ◽  
Di Wu ◽  
Wei-Min Li ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Resistive Random Access Memory ◽  
Bilayer Structure ◽  
Access Memory ◽  
Layer Deposition

scholarly journals High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

2013 ◽  
Vol 8 (1) ◽  
pp. 92 ◽  
Author(s):  
Run-Chen Fang ◽  
Qing-Qing Sun ◽  
Peng Zhou ◽  
Wen Yang ◽  
Peng-Fei Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Layer Deposition

scholarly journals Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2Based RRAM Devices

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Lifeng Liu ◽  
Yi Hou ◽  
Weibing Zhang ◽  
Dedong Han ◽  
Yi Wang
Keyword(s):  
Atomic Layer Deposition ◽  
Structural Properties ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Resistive Random Access Memory ◽  
Ozone Treatment ◽  
Access Memory ◽  
Layer Deposition

HfAlO2based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2based RRAM devices is related to changes in compositional and structural properties of the HfAlO2resistive switching film with the ozone treatment.

scholarly journals Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Gang Niu ◽  
Hee-Dong Kim ◽  
Robin Roelofs ◽  
Eduardo Perez ◽  
Markus Andreas Schubert ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Layer Deposition

Characteristics Of SnSbSe (SSS) Thin Films Grown by Atomic Layer Deposition for High Performance Phase Change Random Access Memory (PCRAM)

2013 ◽  
Vol 53 (6) ◽  
pp. 45-51 ◽  
Author(s):  
K. Lee ◽  
S. Kang ◽  
J. Ku ◽  
K. Hong ◽  
S. Park
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Phase Change ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Access Memory ◽  
Layer Deposition

scholarly journals Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 281 ◽  
Author(s):  
Seung Ik Oh ◽  
In Hyuk Im ◽  
Chanyoung Yoo ◽  
Sung Yeon Ryu ◽  
Yong Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Switching Behavior ◽  
Access Memory ◽  
Set Switching ◽  
Layer Deposition ◽  
Avrami Kinetics

The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN or W bottom electrode (BE). The crystallization behavior is characterized by applying an electrical pulse train and analyzed by applying the Johnson–Mehl–Avrami kinetics model. The device with TiN BE shows a high Avrami coefficient (>4), meaning that continuous and multiple nucleations occur during crystallization (set switching). Meanwhile, the device with W BE shows a smaller Avrami coefficient (~3), representing retarded nucleation during the crystallization. In addition, larger voltage and power are necessary for crystallization in case of the device with W BE. It is believed that the thermal conductivity of the BE material affects the temperature distribution in the device, resulting in different crystallization kinetics and set switching behavior.

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