scholarly journals Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Gang Niu ◽  
Hee-Dong Kim ◽  
Robin Roelofs ◽  
Eduardo Perez ◽  
Markus Andreas Schubert ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Layer Deposition

scholarly journals Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2Based RRAM Devices

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Lifeng Liu ◽  
Yi Hou ◽  
Weibing Zhang ◽  
Dedong Han ◽  
Yi Wang
Keyword(s):  
Atomic Layer Deposition ◽  
Structural Properties ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Resistive Random Access Memory ◽  
Ozone Treatment ◽  
Access Memory ◽  
Layer Deposition

HfAlO2based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2based RRAM devices is related to changes in compositional and structural properties of the HfAlO2resistive switching film with the ozone treatment.

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