Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications

2018 ◽  
Vol 10 (48) ◽  
pp. 41544-41551 ◽  
Author(s):  
Sang Hyeon Kim ◽  
Woongkyu Lee ◽  
Cheol Hyun An ◽  
Dae Seon Kwon ◽  
Dong-Gun Kim ◽  
...  
Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 281 ◽  
Author(s):  
Seung Ik Oh ◽  
In Hyuk Im ◽  
Chanyoung Yoo ◽  
Sung Yeon Ryu ◽  
Yong Kim ◽  
...  

The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN or W bottom electrode (BE). The crystallization behavior is characterized by applying an electrical pulse train and analyzed by applying the Johnson–Mehl–Avrami kinetics model. The device with TiN BE shows a high Avrami coefficient (>4), meaning that continuous and multiple nucleations occur during crystallization (set switching). Meanwhile, the device with W BE shows a smaller Avrami coefficient (~3), representing retarded nucleation during the crystallization. In addition, larger voltage and power are necessary for crystallization in case of the device with W BE. It is believed that the thermal conductivity of the BE material affects the temperature distribution in the device, resulting in different crystallization kinetics and set switching behavior.


2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Lifeng Liu ◽  
Yi Hou ◽  
Weibing Zhang ◽  
Dedong Han ◽  
Yi Wang

HfAlO2based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2based RRAM devices is related to changes in compositional and structural properties of the HfAlO2resistive switching film with the ozone treatment.


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