High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/5.0073523 ◽

2021 ◽

Vol 130 (22) ◽

pp. 225701

Author(s):

Suman Das ◽

Tamara Isaacs-Smith ◽

Ayayi Ahyi ◽

Marcelo A. Kuroda ◽

Sarit Dhar

Keyword(s):

Nitric Oxide ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Characteristics

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High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1849424 ◽

2005 ◽

Vol 97 (4) ◽

pp. 046106 ◽

Author(s):

Stephen K. Powell ◽

Neil Goldsman ◽

Aivars Lelis ◽

James M. McGarrity ◽

Flynn B. McLean

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Modeling

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High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors

phys stat sol (a) ◽

10.1002/1521-396x(200111)188:1<219::aid-pssa219>3.0.co;2-l ◽

2001 ◽

Vol 188 (1) ◽

pp. 219-222 ◽

Author(s):

G. Simin ◽

A. Tarakji ◽

X. Hu ◽

A. Koudymov ◽

J. Yang ◽

...

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Performance ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1921 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1921-1928 ◽

Author(s):

Takeo Matsuki ◽

Seiji Inumiya ◽

Nobuyuki Mise ◽

Takahisa Eimori ◽

Yasuo Nara

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interfacial Reaction ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Temperature Annealing ◽

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Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.5120704 ◽

2019 ◽

Vol 126 (14) ◽

pp. 145702 ◽

Author(s):

J. P. Ashton ◽

P. M. Lenahan ◽

D. J. Lichtenwalner ◽

A. J. Lelis ◽

M. A. Anders

Keyword(s):

Nitric Oxide ◽

Magnetic Resonance ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Magnetic Resonance Study ◽

Electrically Detected Magnetic Resonance

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High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films

Applied Physics Letters ◽

10.1063/1.98282 ◽

1987 ◽

Vol 51 (24) ◽

pp. 2028-2030 ◽

Author(s):

J. W. Palmour ◽

H. S. Kong ◽

R. F. Davis

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Characterization of device parameters in high‐temperature metal‐oxide‐semiconductor field‐effect transistors in β‐SiC thin films

Journal of Applied Physics ◽

10.1063/1.341731 ◽

1988 ◽

Vol 64 (4) ◽

pp. 2168-2177 ◽

Author(s):

J. W. Palmour ◽

H. S. Kong ◽

R. F. Davis

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Accurate Extraction and Modeling of High-Temperature-Dependent Channel Mobility in Metal–Oxide–Semiconductor Field-Effect Transistors Using MeasuredS-Parameters

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc22 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC22

Author(s):

Bonghyuk Ko ◽

Daehyoun Jung ◽

Seonghearn Lee

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Dependent ◽

Channel Mobility

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Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (110) Si

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc26 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC26 ◽

Author(s):

Sung-Ho Jeon ◽

Noriyuki Taoka ◽

Hiroaki Matsumoto ◽

Kiyotaka Nakano ◽

Susumu Koyama ◽

...

Keyword(s):

Surface Roughness ◽

High Temperature ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Temperature Annealing ◽

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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