Valence band convergence and nanostructured phonon scattering trigger high thermoelectric performance in SnTe

2021 ◽  
Vol 119 (25) ◽  
pp. 253901
Author(s):  
Debattam Sarkar ◽  
Subarna Das ◽  
Kanishka Biswas
2020 ◽  
Vol 8 (41) ◽  
pp. 21642-21648 ◽  
Author(s):  
Zhe Guo ◽  
Qiang Zhang ◽  
Hongxiang Wang ◽  
Xiaojian Tan ◽  
Fanfan Shi ◽  
...  

Bi–Zn codoping promotes valence band convergence and strengthens multiple defect-phonon scattering in GeTe, leading to obviously improved thermoelectric properties.


2021 ◽  
pp. 2105008
Author(s):  
Somnath Acharya ◽  
Byung‐Kyu Yu ◽  
Junphil Hwang ◽  
Jiyong Kim ◽  
Woochul Kim

RSC Advances ◽  
2021 ◽  
Vol 11 (25) ◽  
pp. 15486-15496
Author(s):  
Enamul Haque

The layered structure, and presence of heavier elements Rb/Cs and Sb induce high anharmonicity, low Debye temperature, intense phonon scattering, and hence, low lattice thermal conductivity.


2015 ◽  
Vol 137 (35) ◽  
pp. 11507-11516 ◽  
Author(s):  
Gangjian Tan ◽  
Fengyuan Shi ◽  
Shiqiang Hao ◽  
Hang Chi ◽  
Trevor P. Bailey ◽  
...  

2021 ◽  
Author(s):  
Ranita Basu ◽  
Mandava Srikanth ◽  
Sandhya U. Shenoy ◽  
Denthaje Krishna Bhat ◽  
Bayikadi Khasimsaheb ◽  
...  

Several endeavors were adapted to improve the thermoelectric performance of SnTe as a substitute of toxic PbTe and booming approaches comprise introduction of nanostructuring, resonance states, valence band convergence and...


2018 ◽  
Vol 9 (37) ◽  
pp. 7376-7389 ◽  
Author(s):  
Xiaolei Shi ◽  
Kun Zheng ◽  
Min Hong ◽  
Weidi Liu ◽  
Raza Moshwan ◽  
...  

In this study, we, for the first time, report a high Cu solubility of 11.8% in single crystal SnSe microbelts synthesized via a facile solvothermal route.


2019 ◽  
Vol 2 (3) ◽  
pp. 1997-2003 ◽  
Author(s):  
Sihui Li ◽  
Junyou Yang ◽  
Jiwu Xin ◽  
Qinghui Jiang ◽  
Zhiwei Zhou ◽  
...  

2017 ◽  
Vol 5 (23) ◽  
pp. 5737-5748 ◽  
Author(s):  
Subhajit Roychowdhury ◽  
U. Sandhya Shenoy ◽  
Umesh V. Waghmare ◽  
Kanishka Biswas

Remarkable enhancement of the Seebeck coefficient of an Sn rich Sn1−xPbxTe system due to the synergistic effect of resonance level formation and valence band convergence.


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