scholarly journals Symmetry-dependent electronic structure transition in graphether nanoribbons

AIP Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 015118
Author(s):  
Yue Jiang ◽  
Yandong Guo ◽  
Hongli Zeng ◽  
Liyan Lin ◽  
Xiaohong Yan
Keyword(s):  
Electronic Structure ◽  
Structure Transition

Element-Selective Observation of Electronic Structure Transition between Semiconducting and Metallic States in Boron-Doped Diamond Using Soft X-ray Emission and Absorption Spectroscopy

2005 ◽  
Vol 44 (9A) ◽  
pp. 6612-6617 ◽  
Author(s):  
Junji Iihara ◽  
Yasuji Muramatsu ◽  
Toshihiko Takebe ◽  
Akitaka Sawamura ◽  
Akihiko Namba ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Absorption Spectroscopy ◽  
Boron Doped Diamond ◽  
Structure Transition ◽  
X Ray ◽  
Boron Doped

Manifold electronic structure transition of hybrid silicane–silicene nanoribbons

2014 ◽  
Vol 595-596 ◽  
pp. 20-24 ◽  
Author(s):  
Guihua Li ◽  
Jie Tan ◽  
Xiangdong Liu ◽  
Xiaopeng Wang ◽  
Feng Li ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Structure Transition ◽  
Silicene Nanoribbons

scholarly journals Evidence of two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Minyong Han ◽  
Hisashi Inoue ◽  
Shiang Fang ◽  
Caolan John ◽  
Linda Ye ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Finite Energy ◽  
Flat Band ◽  
Tunneling Conductance ◽  
Two Dimensional ◽  
Structure Transition ◽  
Spintronic Devices ◽  
Lattice Geometry ◽  
Planar Tunneling ◽  
Type Semiconductor

AbstractThe kagome lattice has long been regarded as a theoretical framework that connects lattice geometry to unusual singularities in electronic structure. Transition metal kagome compounds have been recently identified as a promising material platform to investigate the long-sought electronic flat band. Here we report the signature of a two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn by means of planar tunneling spectroscopy. Employing a Schottky heterointerface of FeSn and an n-type semiconductor Nb-doped SrTiO3, we observe an anomalous enhancement in tunneling conductance within a finite energy range of FeSn. Our first-principles calculations show this is consistent with a spin-polarized flat band localized at the ferromagnetic kagome layer at the Schottky interface. The spectroscopic capability to characterize the electronic structure of a kagome compound at a thin film heterointerface will provide a unique opportunity to probe flat band induced phenomena in an energy-resolved fashion with simultaneous electrical tuning of its properties. Furthermore, the exotic surface state discussed herein is expected to manifest as peculiar spin-orbit torque signals in heterostructure-based spintronic devices.

Manifold electronic structure transition of BNC biribbons

2011 ◽  
Vol 110 (3) ◽  
pp. 034314 ◽  
Author(s):  
Yingcai Fan ◽  
Mingwen Zhao ◽  
Xuejuan Zhang ◽  
Zhenhai Wang ◽  
Tao He ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Structure Transition

Low-temperature localized motion of hydrogen and electronic structure transition in hexagonal-close-packed scandium

1989 ◽  
Vol 39 (4) ◽  
pp. 2012-2021 ◽  
Author(s):  
L. R. Lichty ◽  
J-W. Han ◽  
R. Ibanez-Meier ◽  
D. R. Torgeson ◽  
R. G. Barnes ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Low Temperature ◽  
Structure Transition ◽  
Hexagonal Close Packed

scholarly journals Electronic structure transition of Cubic CsSnCl3 under pressure: Effect of rPBE and PBEsol functionals and GW method

Heliyon ◽  
2021 ◽  
pp. e07796
Author(s):  
Md. Majibul Haque Babu ◽  
Tusar Saha ◽  
Jiban Podder ◽  
Protima Roy ◽  
Abdul Barik ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Pressure Effect ◽  
Structure Transition

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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